In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12S ( 1992-12-01), p. 4559-
Abstract:
A low-temperature poly-Si thin-film transistor (TFT), having inverted-staggered structure, has been developed successfully using excimer laser annealing and ion doping. This TFT is suitable for pixel transistors of large-area and high-resolution LCDs. The maximum process temperature of the TFT fabrication steps is less than 450°C, so the same glass substrate on which amorphous Si TFT arrays are formed can be used in this poly-Si TFT process. Furthermore, most of the procedures, equipment and thin-film materials used to fabricate amorphous Si TFTs are compatible with fabrication of the poly-Si TFTs. On the other hand, some investigation of the CMOS driver circuit has been done, and it has been found that the threshold voltage of these poly-Si TFTs can be controlled easily by lightly doping of B ion into the channel region using the ion doping system.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.4559
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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