In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 4 ( 2022), p. 046103-
Abstract:
A quasi-two-dimensional manganese-based compound ThMnSbN is synthesized by the solid-state reaction method. Structural refinement based on X-ray powder diffraction shows that the compound structure belongs to the 〈i〉P〈/i〉4/〈i〉nmm〈/i〉 space group. The lattice parameters are 〈i〉a〈/i〉 = 4.1731 Å and 〈i〉c〈/i〉 = 9.5160 Å. Electrical transport measurements show that the resistivity of the compound is the lowest in the Mn-based family. When cooling it, its resistivity rises slowly and shows a shoulder-like anomaly at 16 K. Also, the magnetic susceptibility exhibits an anomaly at the very same temperature. Though the specific heat data indicate the inexistence of transition-induced anomaly, the electron specific heat coefficient of 〈i〉γ〈/i〉 = 19.7 mJ·mol〈sup〉–1〈/sup〉·K〈sup〉–2〈/sup〉 is derived by fitting the low-temperature 〈i〉C〈/i〉-〈i〉T〈/i〉 curve. This 〈i〉γ〈/i〉 value is much higher than those of the isostructural manganese-based compounds. Thus, the specific heat is consistent with the low resistivity, implying a considerable electronic density of states near the Fermi surface for ThMnSbN. By comparing the crystal structure for a group of ZrCuSiAs-type compounds, various chemical pressure effects of the fluorite-type Th〈sub〉2〈/sub〉N〈sub〉2〈/sub〉 layer on the conducting layer in different compounds are discussed.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.71.20211706
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2022
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