In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 1 ( 1999-01-01), p. 230-232
Abstract:
A reliable process has been developed for the fabrication of all Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes, and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single-electron transistor made of 0.3×0.3 μm2 area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1999
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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