Format:
II, 127 p. = 2 MB, text and images
,
ill., graphic representations
Edition:
[Electronic ed.]
Content:
Solar cells on base of the semiconductor Cu(In,Ga)Se2 (CIGS) are to be crossed thereby the boundary for commercialization. An efficiency from so far about 19% promises a large potential. Unfortunately the physical understanding limps to technological successes afterwards. In the available work the charge transport and the defect physics are examined by solar cells and Schottky-contacts on base of CIGS with the help of admittance spectroscopy, DLTS and quantum yield. Additionally calculations (with SCAPS-1D) are made. It is shown that with the help of the admittance spectroscopy a quality control of the solar cells is possible. By different DLTS methods (among others Conductance-, Reverse- and Laplace-DLTS) the complicated defect physics is comprehensive examined. The measurement of the quantum yield and the comparative calculations refer to a strong influence of the grain boundaries on the charge transfer. Further the influence of sodium is discussed both on the grain morphology and on the electrical characteristics of the CIGS absorber
Note:
Oldenburg, Univ., Diss., 1999
Language:
German
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