Format:
Online-Ressource
ISSN:
1521-3951
Content:
Abstract: This overview, based on earlier published papers, concerns the growth and some properties of single and polycrystalline cubic silicon carbide (3C‐SiC) prepared by thermal decomposition of methyl trichlorosilane in hydrogen on resistively heated graphite substrates in a temperature range of 1500 to 2100 K. The morphology of faceted crystals and their specific twin structure, as well as the effects of crystallographic polarity of the 3C‐SiC structure (sphalerite type) on impurity segregation and etching are considered in some detail.
In:
volume:202
In:
number:1
In:
year:2001
In:
pages:221-245
In:
extent:25
In:
Physica status solidi / B. B, Basic solid state physics, Weinheim : Wiley-VCH, [1971]-, 202, Heft 1 (2001), 221-245 (gesamt 25), 1521-3951
Language:
English
DOI:
10.1002/1521-3951(199707)202:1〈221::AID-PSSB221〉3.0.CO;2-L
URN:
urn:nbn:de:101:1-2023122107022064656622
URL:
https://doi.org/10.1002/1521-3951(199707)202:1〈221::AID-PSSB221〉3.0.CO;2-L
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023122107022064656622
URL:
https://d-nb.info/1314268767/34
URL:
https://doi.org/10.1002/1521-3951(199707)202:1〈221::AID-PSSB221〉3.0.CO;2-L
Bookmarklink