Format:
1 Online-Ressource (490 pages)
ISBN:
9780128097236
Series Statement:
Semiconductors and Semimetals v.96
Content:
Front Cover -- III-Nitride Semiconductor Optoelectronics -- Copyright -- Contents -- Contributors -- Preface -- Part I: AlGaN UV Optoelectronics -- Chapter One: Materials Challenges of AlGaN-Based UV Optoelectronic Devices -- 1. Introduction -- 2. Doping Challenges of AlGaN Alloys -- 2.1. P-Type Doping -- 2.1.1. Optimized Growth Conditions for p-Type Doping of AlGaN -- 2.1.2. Polarization Engineering Approaches to p-Type Doping -- 2.1.2.1. Mg-Doped Superlattices -- 2.1.2.2. Distributed Polarization Doping -- 2.1.2.3. Tunnel Junctions -- 2.2. n-Type doping -- 3. Substrates for UV Optoelectronics -- 3.1. Introduction -- 3.2. Strain Management and Reduction of Extended Defects -- 3.2.1. Impact of Extended Defects on Material and Device Properties -- 3.2.2. Approaches to Strain Management and Defect Reduction -- 3.3. Electrically Conductive Substrates and Alternative Approaches for Vertical-Injection-Geometry Devices -- 3.3.1. n-Type GaN Substrates -- 3.3.2. n-Type SiC Substrates -- 3.3.3. Substrate Removal -- 4. Summary and Outlook -- Acknowledgments -- References -- Chapter Two: Development of Deep UV LEDs and Current Problems in Material and Device Technology -- 1. Introduction -- 2. Epitaxial Growth of AlN and AlGaN Alloys -- 2.1. High-Temperature MOCVD Growth of AlN on Sapphire -- 2.2. MOCVD Growth of AlGaN Alloys -- 3. Optical Properties of AlGaN -- 3.1. Carrier Density and PL Decay Kinetics -- 3.2. PL Efficiency and Lifetime -- 3.3. Spectral Dependence of PL and Carrier Decay -- 4. UV LED Device Design and Performance -- 4.1. Efficiency of UV LED Devices -- 4.2. UV LED Chip Design -- 4.3. Improvements in Light Extraction from UV LED Devices -- 5. Conclusions -- Acknowledgments -- References -- Chapter Three: Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes -- 1. Introduction
Content:
2. Research Background of DUV LEDs -- 3. Growth of High-Quality AlN on Sapphire Substrate -- 4. Increase in IQE -- 5. 222-351nm AlGaN and InAlGaN DUV LEDs -- 6. Increase in EIE by MQB -- 7. Future LED Design for High LEE -- 8. Summary -- References -- Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors -- 1. Introduction -- 2. MOCVD Growth of III-N DUV Materials and Heterostructures -- 2.1. Substrate Selection Issues -- 2.2. Growth of High-Quality AlN on Sapphire Templates -- 2.3. Strain Effects -- 2.4. Doping Issues -- 3. III-N Device Design and Simulation -- 3.1. Simulation of Basic Materials Properties -- 3.2. Comparison of Simulation Techniques -- 4. Processing of III-N DUV Emitters and Photodetectors -- 4.1. Ohmic Contacts -- 4.1.1. n-Type Contacts -- 4.1.2. p-Type Contacts -- 4.2. Etching of III-N Materials -- 4.3. Passivation of III-N Devices -- 5. Performance of III-N DUV Lasers and Photodetectors -- 5.1. Overview of DUV Lasers -- 5.2. Optically Pumped DUV Lasers on Sapphire -- 5.3. Fabry-Perot Injection Laser Limits -- 5.4. III-N UVVCSEL Issues and Distributed Bragg Reflector Mirrors -- 6. III-N DUV Photodetectors -- 6.1. DUVPIN Photodiodes -- 6.2. III-N UV Avalanche Photodiodes (APDs) -- 7. Conclusions -- Acknowledgments -- References -- Chapter Five: Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics -- 1. Introduction -- 2. Growth and Characterization of Al(Ga)N Nanowires -- 2.1. Ternary AlGaN Nanowires -- 2.1.1. Ternary AlGaN Nanowires by CVD -- 2.1.2. Ternary AlGaN Nanowires by MBE -- 2.1.3. Ternary AlGaN Nanowires on Patterned Substrate -- 2.2. AlN Nanowires -- 2.3. Quantum-Confined Nanostructures in Al(Ga)N Nanowires -- 3. Al(Ga)N Nanowire LEDs -- 3.1. Deep UV LEDs with Ternary AlGaN Nanowires -- 3.2. AlN Nanowire LEDs -- 4. Electrically Injected Lasers with Ternary AlGaN Nanowires
Content:
5. Other Devices and Applications with Al(Ga)N Nanowires -- 6. Conclusion -- References -- Part II: InGaN Nanostructures: Epitaxy, Properties, and Emerging Device Applications -- Chapter Six: Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires -- 1. Introduction -- 2. Nucleation and Polarity -- 2.1. Growth of GaN NWs on Bare Silicon -- 2.2. Growth of GaN NWs on Silicon Using an AlN Buffer -- 2.2.1. AlN Buffer Growth on Si (111) -- 2.2.1.1. Al-First AlN Buffer -- 2.2.1.2. N-First AlN Buffer -- 2.2.2. GaN NWs on AlN Buffer -- 2.2.3. GaN NWs on Si (111) Without AlN Buffer -- 3. From Nucleation to Steady-State Growth: The Issue of Nuclei Ripening -- 3.1. The Incubation Time -- 3.2. The Nucleation Stage -- 4. Structural Properties of GaN NWs -- 4.1. Basal Stacking Faults -- 4.2. Inversion Domain Boundaries -- 4.3. NW Coalescence -- 5. Conclusion -- References -- Chapter Seven: Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy -- 1. Introduction -- 2. SAG of InGaN/GaN NCs on GaN/Sapphire Templates -- 2.1. Growth and Characterization of InGaN/GaN Nanocolumnar Heterostructures for LEDs Emitting in the Blue, Green, and Red ... -- 2.2. InGaN/GaN NCs for Phosphor Free White Light Emission -- 3. SAG of InGaN/GaN Core-Shell Micropillars -- 4. SAG of InGaN/GaN NCs on Silicon -- 5. Summary and Conclusions -- Acknowledgments -- References -- Chapter Eight: InN Nanowires: Epitaxial Growth, Characterization, and Device Applications -- 1. Introduction -- 2. Growth and Synthesis of InN Nanowires -- 2.1. InN Nanowires Synthesized by CVD -- 2.2. InN Nanowires Grown by MBE -- 2.3. New Aspects of Synthesizing InN Nanowires -- 2.3.1. InN Core-Shell Nanowires -- 2.3.2. InN Nanowires by Selective Area Growth Process -- 2.3.3. InN Nanowires Formed Directly on SiOx by MBE
Content:
3. Electrical and Optical Properties of n-Type Degenerate InN Nanowires -- 3.1. Electrical Properties -- 3.2. Optical Properties -- 4. Electrical and Optical Properties of Intrinsic InN Nanowires -- 4.1. Controlling the Surface Electron Accumulation -- 4.2. Electrical Properties -- 4.3. Optical Properties -- 5. p-Type InN Nanowires -- 5.1. PL Characteristics of Mg-Doped InN Nanowires -- 5.2. p-Type InN Surface -- 5.3. p-Type InN Nanowire Transistor -- 5.4. p-i-n InN Nanowire LEDs -- 6. On the Surface Charge Properties of InN -- 7. InN Nanowire Devices and Applications -- 7.1. InN Nanowire Optoelectronic Devices -- 7.1.1. Light Emitters from Visible to Tera-Hertz -- 7.1.2. Photodetectors -- 7.1.3. Solar Cells -- 7.2. Emerging Devices with InN Nanowires -- 8. Summary -- References -- Chapter Nine: Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole I ... -- 1. Introduction -- 1.1. Brief Introduction of Dynamic Atomic Layer Epitaxy in Monolayer-InN/GaN System -- 1.2. Proposal of III-N Ordered Alloys Developed by Dynamic-ALEp -- 2. Development of Dynamic-ALEp in Highly Mismatched InN/GaN System -- 2.1. Impact of Increase in Growth Temperature on InN/GaN Heteroepitaxy -- 2.2. Coherent Monolayer-InN in GaN Matrix -- 2.3. Growth Front Analogy of Monolayer-In(N) on GaN by MOVPE -- 3. III-N Ordered Alloys Grown by Dynamic-ALEp -- 3.1. MBE Achievement of (InN)1/(GaN)n Ordered Alloys -- 3.2. MOVPE Trial for Growing (InN)1/(GaN)n SPSs and Solar Cells -- 3.3. AlGaN and AlInN Ordered Alloys Toward Electronic Device Application -- 4. Summary -- Acknowledgments -- References -- Chapter Ten: Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications -- 1. Introduction -- 2. Advantages of Nanorod/Nanowire Heterostructures -- 3. Polarization Effects
Content:
4. Nanorod/Nanowire Growth and Polarity Control -- 5. Doping and Surface Properties -- 6. III-Nitride Nanorod Heterojunction Band Alignments -- 7. Disk-in-Rod Nanorod Heterostructures as Full-Color Light Emitters -- 8. Tunable White LEDs Based on Disk-in-Rod Nanorod Heterostructures -- 9. Green and Full-Color Core-Shell Nanorod Plasmonic Lasers -- 10. Conclusions and Outlook -- Acknowledgments -- References -- Chapter Eleven: III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) Silicon -- 1. Introduction -- 2. Molecular Beam Epitaxy (MBE) of III-Nitride Nanowires on (001) Silicon -- 3. Fabrication of Nanowire Waveguides and Electrically Pumped Edge-Emitting Visible Lasers on (001) Silicon -- 4. Mode Confinement and Propagation in Nanowire Lasers -- 5. Characteristics of Visible Nanowire Lasers -- 6. Electrically Pumped 1.3μm Disk-in-Nanowire Lasers on Silicon -- 7. Conclusion -- References -- Chapter Twelve: Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Heterointegrated on Silicon -- 1. Introduction to Photonics -- 2. Background -- 2.1. Lighting Technologies, Solid-State Lighting, and Light-Emitting Diodes -- 2.2. Current Barriers in Green LEDs -- 3. Cubic Gallium Nitride -- 3.1. Problem Statement -- 3.2. State of the Art -- 3.3. Novel Approach: Hexagonal-to-Cubic Transition -- 3.4. Crystallographic Modeling -- 3.5. Substrate Preparation -- 3.6. Material Growth and Characterization -- 4. Future Prospects of Cubic GaN Materials -- 5. Conclusion -- Acknowledgments -- References -- Index -- Contents of Volumes in this Series -- Back Cover
Additional Edition:
9780128095843
Additional Edition:
Erscheint auch als Druck-Ausgabe Mi, Zetian III-Nitride Semiconductor Optoelectronics Saint Louis : Elsevier Science,c2017 9780128095843
Language:
English
URL:
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