Format:
Online-Ressource
ISSN:
1521-3862
Content:
Abstract: Gallium nitride (GaN) nanoparticles are successfully synthesized via an improved microwave plasma‐enhanced (MPE) CVD method. Optimization of the MPECVD process is achieved by manipulating the plasma operating conditions, such as antenna length, input power, and pressure. The resulting GaN nanoparticles have an average size of around 8.5 nm with a very narrow size distribution, indicating that well‐dispersed nanoparticles can be obtained, due to the negative charge of the particles caused by the collision of electrons in the plasma process. In addition, a satisfactory stoichiometric ratio, high crystallinity, and relatively good photoluminescence (PL) properties of the GaN nanoparticles are achieved, due to the improved process.
Content:
Gallium nitride nanoparticles were synthesized by a microwave plasma enhanced chemical vapor deposition method. The as‐prepared nanoparticles showed well dispersity, satisfactory stoichiometric ratio and good photoluminescence properties, owing to their strong negative charging and the improvement of the process, respectively.
In:
volume:16
In:
number:4‐6
In:
year:2010
In:
pages:151-156
In:
extent:6
In:
Chemical vapor deposition, Weinheim : Wiley-VCH, 1995-2015, 16, Heft 4‐6 (2010), 151-156 (gesamt 6), 1521-3862
Language:
English
DOI:
10.1002/cvde.200906811
URN:
urn:nbn:de:101:1-2023051805095976893123
URL:
https://doi.org/10.1002/cvde.200906811
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023051805095976893123
URL:
https://d-nb.info/1289760837/34
URL:
https://doi.org/10.1002/cvde.200906811
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