Format:
Online-Ressource (236 p)
,
ill
Edition:
Online-Ausg. 2013 Electronic reproduction; Available via World Wide Web
ISBN:
9783862194865
Series Statement:
Elektrische Energiesysteme Bd. 3
Content:
Front Cover -- Series Title -- Title page -- Imprint -- Foreword -- Summary -- Zusammenfassung -- Table of Contents -- 1 Introduction -- 1.1. Motivation of the work -- 1.2. Structure of the work -- 2 State-of-the-art power devices based on WBG -- 2.1. SiC-MOSFETs -- 2.1.1. Device structure and characteristics -- 2.2. SiC-JFETs -- 2.2.1. Device structure and characteristics -- 2.2.2. Operation & Driving -- 2.3. SiC-BJTs -- 2.3.1. Device structure and properties -- 2.3.2. Operation & Driving -- 2.4. GaN devices -- 2.4.1. Device structure and characteristics -- 2.4.2. Operation & Driving -- 3 Experimental investigation and benchmarking -- 3.1. Experimental investigation -- 3.1.1. Gate characteristics -- 3.1.2. Device capacitances -- 3.1.3. Forward characterization -- 3.1.4. Switching behavior characterization -- 3.1.5. Operation at higher speeds -- 3.2. Benchmarking of investigated devices -- 3.2.1. Static behavior and temperature dependence -- 3.2.2. Dynamic behavior -- 3.2.3. Performance benchmarking -- 3.2.4. Benchmarking considering maximum achievable switching speed -- 3.2.5. Driving issues -- 3.2.6. Freewheeling-related issues -- 4 Application of WBG devices: switching frequency and passive filter elements -- 4.1. Switching speed and related issues -- 4.1.1. Critical aspects -- 4.1.2. Dynamic resistance -- 4.2. Effects on magnetic components -- 4.2.1. Overview of magnetic materials and properties -- 4.2.2. Prospects regarding higher switching frequencies -- 4.2.3. Prospects regarding higher ripple amplitudes [48] -- 5 Application of WBG devices: cooling effort and other thermal aspects -- 5.1. Thermal related issues -- 5.1.1. Maximum temperature and thermal runaway -- 5.1.2. Other limitations -- 5.1.3. Overload capability -- 5.1.4. Loss density and dissipation -- 5.2. Cooling effort
Content:
5.2.1. Savings with operation at high junction temperature -- 5.2.2. Savings with reduction of losses -- 6 Application of WBG devices: chip area expenditure -- 6.1. Analysis considering only conduction losses -- 6.2. Analysis considering conduction and switching losses at same switching frequency -- 6.3. Analysis considering conduction and switching losses for different values of switching frequency -- 7 Analysis on potential savings -- 7.1. Photovoltaic inverters operatingat 16 kHz with IGBTs -- 7.1.1. Size reduction with same power rating -- 7.1.2. Power rating increase with same size -- 7.1.3. Comparison between approaches -- 7.2. High power back to back converter -- 7.3. Additional savings -- 7.3.1. Photovoltaic systems -- 7.3.2. Wind-power systems -- 8 Experimental investigations -- 8.1. Effect of different semiconductor configurations on a single stage photovoltaic inverter -- 8.1.1. Selected topology -- 8.1.2. Tested semiconductor configurations -- 8.1.3. Conclusions -- 8.2. Circuits suitable for normally-on SiC JFETs -- 8.2.1. Experimental results -- 8.2.2. Conclusions -- 8.3. Photovoltaic inverters for 1500V system voltage -- 8.3.1. Optimal input voltage range -- 8.3.2. Topology selection -- 8.3.3. Experimental results -- 8.3.4. Conclusions -- 8.4. Highly compact step-up converter using SiC-BJTs [290] -- 8.4.1. Driving circuit: alternative configuration for lower losses -- 8.4.2. Input filter inductor: maximum size reduction with new materials -- 8.4.3. Experimental results -- 8.4.4. Conclusions -- 8.5. Switching speed and conducted interference[66] -- 8.5.1. Experimental investigation -- 8.5.2. Conclusions -- 9 Conclusions -- 9.1. Device level -- 9.2. Application level -- References -- Abbreviations and symbols -- List of the Figures -- List of the tables -- Back cover
Note:
Includes bibliographical references
,
Universität Kassel, 2013, Dissertation (Dr.-Ing)
,
""Front Cover ""; ""Series Title ""; ""Title page ""; ""Imprint ""; ""Foreword""; ""Summary""; ""Zusammenfassung""; ""Table of Contents""; ""1 Introduction""; ""1.1. Motivation of the work""; ""1.2. Structure of the work""; ""2 State-of-the-art power devices based on WBG""; ""2.1. SiC-MOSFETs""; ""2.1.1. Device structure and characteristics""; ""2.2. SiC-JFETs""; ""2.2.1. Device structure and characteristics""; ""2.2.2. Operation & Driving""; ""2.3. SiC-BJTs""; ""2.3.1. Device structure and properties""; ""2.3.2. Operation & Driving""; ""2.4. GaN devices""
,
""2.4.1. Device structure and characteristics""""2.4.2. Operation & Driving""; ""3 Experimental investigation and benchmarking""; ""3.1. Experimental investigation""; ""3.1.1. Gate characteristics""; ""3.1.2. Device capacitances""; ""3.1.3. Forward characterization""; ""3.1.4. Switching behavior characterization""; ""3.1.5. Operation at higher speeds""; ""3.2. Benchmarking of investigated devices""; ""3.2.1. Static behavior and temperature dependence""; ""3.2.2. Dynamic behavior""; ""3.2.3. Performance benchmarking""; ""3.2.4. Benchmarking considering maximum achievable switching speed""
,
""3.2.5. Driving issues""""3.2.6. Freewheeling-related issues""; ""4 Application of WBG devices: switching frequency and passive filter elements""; ""4.1. Switching speed and related issues""; ""4.1.1. Critical aspects""; ""4.1.2. Dynamic resistance""; ""4.2. Effects on magnetic components""; ""4.2.1. Overview of magnetic materials and properties""; ""4.2.2. Prospects regarding higher switching frequencies ""; ""4.2.3. Prospects regarding higher ripple amplitudes [48]""; ""5 Application of WBG devices: cooling effort and other thermal aspects""; ""5.1. Thermal related issues""
,
""5.1.1. Maximum temperature and thermal runaway""""5.1.2. Other limitations""; ""5.1.3. Overload capability""; ""5.1.4. Loss density and dissipation""; ""5.2. Cooling effort""; ""5.2.1. Savings with operation at high junction temperature""; ""5.2.2. Savings with reduction of losses""; ""6 Application of WBG devices: chip area expenditure""; ""6.1. Analysis considering only conduction losses""; ""6.2. Analysis considering conduction and switching losses at same switching frequency ""; ""6.3. Analysis considering conduction and switching losses for different values of switching frequency ""
,
""7 Analysis on potential savings""""7.1. Photovoltaic inverters operatingat 16 kHz with IGBTs""; ""7.1.1. Size reduction with same power rating""; ""7.1.2. Power rating increase with same size""; ""7.1.3. Comparison between approaches""; ""7.2. High power back to back converter""; ""7.3. Additional savings""; ""7.3.1. Photovoltaic systems""; ""7.3.2. Wind-power systems ""; ""8 Experimental investigations""; ""8.1. Effect of different semiconductor configurations on a single stage photovoltaic inverter ""; ""8.1.1. Selected topology""; ""8.1.2. Tested semiconductor configurations""
,
""8.1.3. Conclusions""
,
Electronic reproduction; Available via World Wide Web
Additional Edition:
ISBN 9783862194872
Additional Edition:
ISBN 9783862194865
Additional Edition:
Erscheint auch als Druck-Ausgabe On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems
Language:
English
Keywords:
Hochschulschrift
;
Academic Dissertation
;
Academic theses.
;
Academic theses.
;
Thèses et écrits académiques.
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