UID:
almafu_9960112694602883
Format:
1 online resource (548 p.)
Edition:
Reprint 2021
ISBN:
9783112500941
Series Statement:
Physica status solidi / A. ; Volume 91, Number 2
Note:
Frontmatter --
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Classification Scheme --
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THIS ISSUE IS DEDICATED TO PROFESSOR Dr. Dr. h. c. Dr. E. h. PAUL GÖRLICH IN HONOUR OF HIS 80th BIRTHDAY --
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Contents --
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Review Articles --
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Impurity Conduction of Chalcogenide Yitreous Semiconductors --
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Magnetic Materials for Recording2 --
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Original Papers --
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Structure --
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Observation en microscopie électronique à haute résolution d'oxydes à grande maille (c-Dy203) et interprétation des images obtenues --
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Crystallization of Amorphous Fe-Si Films --
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Tine Structure of X-Ray Interferograms III. Complex Interference Systems --
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Electron Microscopic Study of the Domains and Interfaces in MV4S8 (M = Fe, Co, Ni) --
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Crystallization of the Metallic Glass Fe^NLtoBäo during Isochronal Annealing in Argon and Hydrogen --
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Phase Transitions between the Quasicrystalline, Crystalline, and Amorphous Phases in Al-14 at% Mn --
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Investigations of the Phase Transition in V3O5 Using Energy Dispersive X-Ray Diffraction and Synchrotron Radiation White Beam X-Ray Topography --
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On the Influence of the Pre-Ageing Conditions on the Reversion Behaviour of an Al-1.87 at% Cu Alloy --
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Formation of Ni Silicides on As-Doped Silicon --
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Negative Secondary Ion Emission Influenced by Alkali Atoms --
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On the Position of the Critical Temperature for the Dissolution of Guinier-Preston Zones in an Al-15 at% Zn Alloy --
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Direct Evidence of Post-Nucleation Decoration --
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Calculated Defocus Diffraction Contrast and Lattice Fringe Imaging of Small Crystal Defects --
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The Direct Observation of "Discommensurations" in Barium Sodium Niobate (BSN) and Its Homologues --
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Lattice properties --
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X-Ray Study of the Thermal Expansion Anisotropy in AgGaS2 and AgInS2 Compounds over the Temperature Range from 80 to 650 K --
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Defects, atomistic aspects --
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Hydrogen Implantation into Silicon --
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Dislocation Dissociation and Electrical Properties of Plastically Deformed Germanium Single Crystals --
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The Investigation of the Shock Deformation Kinetics and Dislocation Dynamics upon Pulse Loading of Csl, NaCl, and LiF Crystals --
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The Trapping of Vacancies by Impurity Vacancy Complexes in Alkali Halide Crystals --
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In-Situ Straining of Cu-10Ni-6Sn Spinodal Alloy in the High Yoltage Electron Microscope --
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Dislocation Behaviour and the Anomalous Yield-Stress Peak in a β-Brass Single Crystal --
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Cathodoluminescence from Electron-Irradiated ZnO --
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Effect of Grain Boundaries on the Out-Diffusion Rate of Volatile Solutes from Thin Wires --
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Magnetism --
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Effect of Dimensional Resonance and Damping Constant on Various Parameters Used in Magneto-Microwave Kerr Effect in Ferrites --
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Magnetic Domains in Antiferromagnetic ZnCr2X4 (X = S, Se) as Seen by Magnetization Measurements --
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The Mechanism of Thermal Remagnetization of Permanent Magnets --
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On the Magnetic Contribution to the Free Enthalpy of Vacancy Formation in Ferromagnetic Crystals --
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Rate Dependence of the Field-Cooled Magnetisation of a Fine Particle System --
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Extended electronic states and transitions --
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Absorption Edge of Pure and Selenium-Doped α-Sulfur Single Crystals --
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Localized electronic states and transitions --
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A Study of Semiinsulating GaAs Surfaces by Thermostimulated Currents --
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Infra-Red Spectra, Electron Spin Resonance Spectra, and Density of (TeO2)100-x-(WO3)x and (TeO2)100-x-(ZnCl2)x Glasses --
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Investigations of the Orange Luminescence of PbMoO4 Crystals --
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Dotierungseigenschaften von Kobalt in Silizium --
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Sensitized IR-Emission of Ho 3+ , Er 3+ , and Tm 3+ in 12R-Ba3LaBW2O12 (B = Er, Tin, Yb) and 12R-Sr3LaYbW2O12 --
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On the Determination of Deep Level Concentration Profiles by DLTS Measurements --
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Electric transport --
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Kelaxation of Current Flowing through Oxide Thermally Grown on Polycrystalline Silicon --
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Heating Rate Dependence of Peak and Position of Maximum Depolarization Current in ITC Measurements --
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Study of Tunnel Currents of Electrons and Holes in Thermal Si02 with Charge Accumulation in the Dielectric --
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Transient Currents in Dielectrics at Non-Linear Law of Single Injection --
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Doping Effects in Transient Radiation-Induced Conductivity of Polymers --
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Reverse Annealing Effect in the Neutron-Irradiated Si:P System --
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Investigation of Dilute Tungsten Alloys by Electrical Transport Measurements --
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Device-related phenomena --
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Investigation of AIIIBV-Si Heterojunctions Grown by Laser Deposition --
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On the Performance of Non-Cooled (In, As)Sb Photoelectromagnetic Detectors for 10.6 m Radiation --
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Short Notes --
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Possible Incommensurate Structure in 4,4'-Dichlor obi phenyl Sulphone as Studied by the 35 CI Nuclei NQR --
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Phase Diagram of the ZnP2-CdP2 System --
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On the Signals Generated by Lead Zirconium Titanate (PZT) Ceramics when Irradiated with Microsecond Pulsed TEA-CO2 Laser Pulses --
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On the Core of the Thermal Donors in Silicon --
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Implantation Effect on Transport Properties of Mobile Ions in Silicon Dioxide --
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On the Energy Change during the Grain Boundary Structure from Non-Equilibrium State to Equilibrium State --
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Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction --
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Crystal Structure and Magnetic Properties of MnAs 0.95 P 0.05 --
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Effect of Annealing Temperature and Magnetizing Frequency on Barkhausen Jumps in Rolled Steel --
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Covalency Effects and the Pressure Dependence of the Mössbauer Line Shifts for Spinel-Type Ferrites --
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Optical Absorption and Thermoluminescence of AC Field-Treated LiF Single Crystals later Irradiated withX-Rays --
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Long-Wavelength Intrinsic Photoconductivity in PbSnTe:In --
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AC Losses of NbN --
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On the Resonance Behaviour of a Thin Film DC-SQUID --
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I-U Characteristics of Strongly Indium-Doped Lead Tin Telluride at Low Temperatures --
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Explanation of the AC Josephson Effect in Nb-NbOx-Pb Tunnel Junctions with the Stewart-Mc Cumber Model --
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Variable Pinch-Off GaAs MESFET --
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Simple Method for the Determination of the Doping Profile in MIS Structures with Implanted Shallow p-n Junction --
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Fast Response Time Measurements in Transistors Using Picosecond Optoelectronic Switches --
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Pre-Printed Titles --
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Manuscripts and letters for physica status solidi (b) — basic research and physica status solidi (a) — applied research
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In English.
Additional Edition:
ISBN 9783112500934
Language:
English
DOI:
10.1515/9783112500941
URL:
https://doi.org/10.1515/9783112500941
URL:
https://www.degruyter.com/isbn/9783112500941
URL:
https://doi.org/10.1515/9783112500941
URL:
https://www.degruyter.com/isbn/9783112500941
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