UID:
almahu_9949865483902882
Format:
1 online resource :
,
text file, PDF
Edition:
First edition.
ISBN:
9781315186153
,
1315186152
,
9781351736251
,
1351736256
,
9781351736237
,
135173623X
,
9789814774215
,
9814774219
Content:
"Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures."--Provided by publisher.
Note:
Cover ; Half Title ; Title ; Copyrights ; Contents; Preface ; Chapter 1. The Significance and Challenges of Direct Growth of Graphene on Semiconductor Surfaces; 1.1 Introduction; 1.2 Direct Growth of Graphene on Si Substrates ; 1.2.1 Laser Direct Growth ; 1.2.2 Carbon Ion Implantation ; 1.2.3 MBE Growth ; 1.3 Thermal Decomposition of Bulk SiC.
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1.4 Graphene on Silicon through Heteroepitaxial 3C-SiC 1.4.1 Thermal Decomposition of 3C-SiC on Si ; 1.4.2 Metal-Mediated Graphene Growth ; 1.5 Conclusions ; Chapter 2. Graphene Synthesized on Cubic-SiC(001) in Ultrahigh Vacuum: Atomic and Electronic Structure and Transport Properties; 2.1 Introduction; 2.2 Synthesis of Few-Layer Graphene.
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2.2.1 Methods of Graphene Fabrication 2.2.2 Growth of Cubic-SiC Epilayers on Standard Si Wafers ; 2.2.3 Synthesis of the Epitaxial Graphene Layers on (111)- and (011)-Oriented Cubic-SiC Films Grown on Si Wafers.
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2.3 Synthesis and Characterization of Continuous Few-Layer Graphene on Cubic-SiC(001 2.3.1 Step-by-Step Characterization of SiC(001) Surface during Graphene Synthesis in Ultrahigh Vacuum ; 2.3.2 Atomic and Electronic Structure of the Trilayer Graphene Synthesized on SiC(001.
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2.3.3 Influence of the SiC(001)-c(2×2) Atomic Structure on the Graphene Nanodomain Network 2.4 Nanodomains with Self-Aligned Boundaries on Vicinal SiC(001)/Si(001) Wafers ; 2.4.1 LEEM and Raman Studies of Graphene/SiC(001)/4°-off Si(001.
Additional Edition:
Print version: ISBN 9781315186153
Additional Edition:
ISBN 9781351736251
Language:
English
URL:
https://www.taylorfrancis.com/books/9781315186153
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