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  • 1
    Online Resource
    Online Resource
    Cambridge :Cambridge University Press,
    UID:
    almahu_9948233578702882
    Format: 1 online resource (xiii, 254 pages) : , digital, PDF file(s).
    ISBN: 9781107280779 (ebook)
    Content: From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry.
    Note: Title from publisher's bibliographic system (viewed on 05 Apr 2016). , Multigate and nanowire transistors -- Synthesis and fabrication of semiconductor nanowires -- Quantum mechanics in one-dimension -- Nanowire electronic structure -- Charge transport in quasi-1D nanostructures -- Nanowire transistor circuits.
    Additional Edition: Print version: ISBN 9781107052406
    Language: English
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  • 2
    UID:
    b3kat_BV021850647
    Note: Ab 1991 u.d.T.: International SOI Conference: Proceedings
    Language: Undetermined
    Subjects: Engineering
    RVK:
    Keywords: Silicium ; Nichtleiter ; CMOS-Schaltung ; Konferenzschrift
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  • 3
    Online Resource
    Online Resource
    Boston, MA : Springer US
    UID:
    b3kat_BV045187280
    Format: 1 Online-Ressource (XII, 228 p)
    ISBN: 9781475721218
    Series Statement: The Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing 132
    Content: 5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . .
    Content: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2.
    Content: Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . .
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9781475721232
    Language: English
    Keywords: VLSI ; Werkstoff ; SOI-Technik
    URL: Volltext  (URL des Erstveröffentlichers)
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  • 4
    Online Resource
    Online Resource
    Boston, MA : Springer US
    UID:
    b3kat_BV045186123
    Format: 1 Online-Ressource (XII, 272 p)
    Edition: 2nd Edition
    ISBN: 9781475726114
    Content: Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits.
    Content: SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition.
    Content: The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9781475726138
    Language: English
    Keywords: VLSI ; Werkstoff ; SOI-Technik
    URL: Volltext  (URL des Erstveröffentlichers)
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  • 5
    Online Resource
    Online Resource
    Boston, MA : Springer US
    UID:
    b3kat_BV045148702
    Format: 1 Online-Ressource (XIII, 366 p)
    Edition: 3rd Edition
    ISBN: 9781441991065
    Content: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9781461347958
    Language: English
    Keywords: VLSI ; Werkstoff ; SOI-Technik
    URL: Volltext  (URL des Erstveröffentlichers)
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  • 6
    Book
    Book
    Boston u.a. :Kluwer Acad. Publ.,
    UID:
    almahu_BV004610464
    Format: XI, 228 S. : graph. Darst.
    ISBN: 0-7923-9150-0
    Series Statement: The Kluwer international series in engineering and computer science : VLSI, computer architecture and digital signal processing
    Note: Literaturverz. S. 203 - 224
    Language: English
    Subjects: Engineering
    RVK:
    Keywords: VLSI ; Werkstoff ; SOI-Technik
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  • 7
    Book
    Book
    Boston [u.a.] : Kluwer Academic
    UID:
    gbv_34938617X
    Format: XIII, 436 S , Ill., graph. Darst , 25 cm
    ISBN: 1402070187 , 1402070187
    Note: Includes bibliographical references and index
    Language: English
    Subjects: Engineering , Physics
    RVK:
    RVK:
    Keywords: Halbleiterphysik
    URL: Cover
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  • 8
    UID:
    gbv_875081002
    Format: 1 Online-Ressource (xiii, 254 Seiten)
    ISBN: 9781107280779 , 9781107052406 , 9781107651425
    Content: From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry
    Note: Title from publisher's bibliographic system (viewed on 05 Apr 2016)
    Additional Edition: ISBN 9781107052406
    Additional Edition: Erscheint auch als Druck-Ausgabe Colinge, Jean-Pierre Nanowire transistors Cambridge : Cambridge University Press, 2016 ISBN 1107052408
    Additional Edition: ISBN 9781107052406
    Language: English
    Keywords: Nanodraht ; Transistor
    URL: Volltext  (URL des Erstveröffentlichers)
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