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  • 1
    Book
    Book
    New York u.a. : Plenum Pr.
    UID:
    b3kat_BV005548296
    Format: XIV, 842 S. , Ill., graph. Darst. , 26 cm
    Series Statement: Materials science research 17.
    Note: Literaturangaben
    Language: English
    Subjects: Engineering , Physics
    RVK:
    RVK:
    Keywords: Hochleistungskeramik ; Verarbeitung ; Keramischer Werkstoff ; Spitzentechnologie ; Aufsatzsammlung ; Konferenzschrift
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  • 2
    UID:
    almafu_BV009036405
    Format: XVI, 421 S. : Ill., graph. Darst.
    ISBN: 0-8155-1323-2
    Series Statement: Materials science and process technology series
    Language: English
    Subjects: Engineering , Physics
    RVK:
    RVK:
    Keywords: Beschichtung ; Diamant ; Diamantähnlicher Kohlenstoff ; Diamant ; Dünne Schicht ; Diamant ; Dünne Schicht ; Beschichtung
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  • 3
    UID:
    almahu_9948310262302882
    Format: x, 284 p. : , ill.
    Edition: Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
    Series Statement: Selected topics in electronics and systems ; v. 33
    Language: English
    Keywords: Electronic books.
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  • 4
    UID:
    almahu_9949198570302882
    Format: XVI, 856 p. 354 illus. , online resource.
    Edition: 1st ed. 1984.
    ISBN: 9781468482058
    Series Statement: Materials Science Research ; 17
    Content: This volume constitutes the Proceedings of the November 8-10, 1982 Conference on EMERGENT PROCESS METHODS FOR HIGH TECHNOLOGY CERAMICS, held at North Carolina State University in Raleigh. It was the nineteenth in a series of "University Conferences on Ceramic Sci­ ence" initiated in 1964 by four institutions of which North Carolina State University is a charter member, along with the University of California at Berkeley, Notre Dame University, and the New York State College of Ceramics at Alfred University. More recently, ceramic­ oriented faculty in departments at the Pennsylvania State University and Case-Western Reserve University have joined the four initial institutions as permanent members of the consortium. These research­ oriented conferences, each uniquely concerned with a timely ceramic theme, have been well attended by audiences which typically were both international and interdisciplinary in character; their published Proceedings have been well received and are frequently cited. This three day conference addressed the fundamental scientific background as well as the technological state-of-the-art of several novel methods which are beginning to influence present and future directions for non-traditional ceramic processing, thus affecting many of the advanced ceramic materials needed for a wide variety of research and industrial applications. The number, the importance and the application of new ceramic processing techniques have expanded considerably during the last ten years.
    Note: I: The Science Of Colloidal Processing -- Interfacial Electrochemistry of Disperse Systems -- How Colloid Stability Affects the Behavior of Suspensions -- Formation and Stability of Colloidal Dispersions of Fine Particles in Water -- Flocculation and Filtration of Colloidal Particles -- The Science of the Interactions of Colloidal Particles and Ceramics Processing -- Preparation of Shaped Glasses Through the Sol-Gel Method -- Inorganic Oxide Gels and Gel-Monoliths: Their Crystallization Behavior -- Boron Nitride Fiber Synthesis from Boric Oxide Precursors -- II: NOVEL POWDER-FORMING AND POWDER-PROCESSING METHODS -- Some Common Aspects of the Formation of Nonoxide Powders by the Vapor Reaction Method -- Synthesis of Powders and Thin Films by Laser Induced Gas Phase Reactions -- Preparation of Zirconia-Alumina Fine Powders by Hydrothermal Oxidation of Zr-Al Alloys -- Combustion Synthesis of Transition Metal Nitrides -- The Influence of Powder Synthesis Techniques on Processes Occurring During Compact Formation and its Sintering -- Dispersion and Packing of Narrow Size Distribution Ceramic Powders -- Plasma Sintering of Ceramics -- Plasma Melting of Selected Compositions in the A12O3-ZrO2-SiO2 System -- Liquid Phase Sintering of Ceramics -- Precision Digital Dilatometry: A Microcomputer-Based Approach to Sintering Studies -- III: Ceramics Derived By Polymer Processing -- The Conversion of Methylchloropolysilanes and Polydisilylazanes to Silicon Carbide and Silicon Carbide/Silicon Nitride Ceramics, Respectively -- Silicon-Nitrogen Polymers and Ceramics Dervied from Reactions of Dichlorosilane, H2SiCl2 -- Formation of Ceramic Composites and Coatings Utilizing Polymer Pyrolysis -- Gas Analysis During the Pyrolysis of Carbosilane -- IV: Chemical Vapor Deposition -- Chemical Vapor Deposition of Ceramic Materials -- The Application of Thermodynamic Calculations to Chemical Vapor Deposition Processes -- CVD of Si3N4 and its Composites -- Preparation of Amorphous Si3N4-BN Composites by Chemical Vapor Deposition -- A Morphological Study of Silicon Borides Prepared by CVD -- A Morphological Study of Silicon Carbide Prepared by Chemical Vapor Deposition -- Low-Temperature Preparation of Pyrolytic Carbon -- Laser Chemical Vapor Deposition (LCVD) -- V: Ion Beam Deposition -- Ion Beam Techniques for the Deposition of Ceramic Thin Films. -- Ionized-Cluster Beam Deposition and Epitaxy -- Ion Beam Deposition of Ceramic-Like Coatings -- VI: Laser And Ion Beam Modification of Surfaces -- Laser Surface Melting of Metals and Alloys -- Laser Processing of Ceramics -- Microstructural Analysis of Rapidly Solidified Alumina -- Structure of Ceramic Surfaces Modified by Ion Beam Techniques -- Microstructure and Mechanical Properties of Ion-Implanted Ceramics -- Microhardness of N-Implanted Yttria Stabilized Zr02 -- VII: Hot Isostatic Pressing -- Hot Isostatic Pressing of Ceramic Materials -- Dense Ceramic Parts Hot Pressed to Shape by HIP -- Fabrication of Si3N4 Ceramics with Additives of Metal Nitrides by High Pressure Hot-Pressing and HIPing -- Diffusion Bonding of AI2O3 and Ceramics by HIPing -- Relationship Between Densification and High Temperature Mechanical Properties of HIPed Silicon Nitride -- Microstructural Changes During Hot Isostatic Pressing of Sintered Lead Zirconate Titanate -- VIII: Dynamic Compaction -- Dynamic Compaction of Powders -- Dynamic Compaction of Ceramic Powders -- Explosive Consolidation of Aluminum Nitride Ceramic Powder: A Case History -- Computer Simulation of Dynamic Compaction -- Investigation of a Method to Consolidate Hard Materials in a Tough Matrix -- IX: Shock Synthesis: Shock Conditioning And Subsequent Densification -- Modern Uses of Explosive Pressure--From Rock Blasting to Synthetic Diamond -- Shock-Induced Modification of Inorganic Powders -- Densification Kinetics of Shock-Activated Nitrides -- Rate Controlled Sintering of Explosively Shock-Conditioned Alumina Powders -- X: Very High Pressure Processing -- High Pressure Processing of High Technology Ceramics -- Diamond Anvil Cell Technology for P,T Studies of Ceramics: ZrO2 (8 mol% Y2O3) -- Effect of Strong Shock Compression on Covalent Materials and High Pressure Sintering -- A New Approach to the Reaction Sintering of Superhard Materials Under Very High Pressure -- Advisory committee -- Contributors.
    In: Springer Nature eBook
    Additional Edition: Printed edition: ISBN 9781468482072
    Additional Edition: Printed edition: ISBN 9780306416774
    Additional Edition: Printed edition: ISBN 9781468482065
    Language: English
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  • 5
    UID:
    almafu_9959242792602883
    Format: 1 online resource (295 p.)
    Edition: 33th ed.
    ISBN: 1-281-34762-0 , 9786611347628 , 981-256-236-2
    Series Statement: Selected topics in electronics and systems ; v. 33
    Content: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
    Note: Description based upon print version of record. , Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN , Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion , English
    Additional Edition: ISBN 981-238-844-3
    Language: English
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