ISSN:
1662-9752
Content:
In this work a new approach of analyzing epitaxial graphene layers on semi-insulating SiC through the gray-scale entropy of SEM images as a measure for the graphene inhomogeneity is demonstrated. Raman spectroscopy as a versatile and the standard tool for graphene characterization allows additionally the determination of the layer properties such as layer count, Fermi level, defect concentration and strain. It is shown that the gray-scale entropy correlates with the defect density derived from Raman measurements and thus can be used as an additional characterization technique with much higher resolution than the conventional Raman spectroscopy allows. As a consequence, the results are used to reflect the two-stepped growth itself and to conclude for advantageous growth conditions.
In:
Materials science forum, Baech : Trans Tech Publications Ltd., 1984, 1004(2020), Seite 525-530, 1662-9752
In:
volume:1004
In:
year:2020
In:
pages:525-530
Language:
English
DOI:
10.4028/www.scientific.net/MSF.1004.525
URL:
Volltext
(lizenzpflichtig)
Author information:
Hähnlein, Bernd 1983-
Author information:
Pezoldt, Jörg
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