Format:
1 Online-Ressource (85 Seiten)
,
Illustrationen
Edition:
Also available in print
ISBN:
9781627051903
Series Statement:
Synthesis Lectures on Power Electronics #6
Content:
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semi-conductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models
Content:
2. One-dimensional thermal model -- 2.1 Package design -- 2.2 Heat conduction problem in DBC structure -- 2.3 Equivalent RC network thermal model -- 2.4 One-dimensional Fourier series thermal model --
Content:
3. Realization of Power IGBT and diode thermal model -- 3.1 Introduction -- 3.2 Realization of equivalent RC network -- 3.3 Realization of one-dimensional Fourier-series thermal model -- 3.4 Temperature dependent parameters of diodes and their connection to an electrical model -- 3.5 Temperature-dependent parameters of NPT IGBT and their connection to the electrical model --
Content:
A. Appendix -- References -- Authors' biographies
Content:
Nomenclature -- 1. Temperature dependencies of material and device parameters -- 1.1 Introduction -- 1.2 Temperature dependencies -- 1.2.1 Intrinsic carrier concentration -- 1.2.2 Ionized donor impurity concentration -- 1.2.3 Carrier mobility -- 1.2.4 Lifetime -- 1.2.5 Emitter recombination parameters -- 1.2.6 Threshold voltage and transconductance --
Note:
Description based upon print version of record
,
Includes bibliographical references
,
2. One-dimensional thermal model2.1 Package design -- 2.2 Heat conduction problem in DBC structure -- 2.3 Equivalent RC network thermal model -- 2.4 One-dimensional Fourier series thermal model
,
3. Realization of Power IGBT and diode thermal model3.1 Introduction -- 3.2 Realization of equivalent RC network -- 3.3 Realization of one-dimensional Fourier-series thermal model -- 3.4 Temperature dependent parameters of diodes and their connection to an electrical model -- 3.5 Temperature-dependent parameters of NPT IGBT and their connection to the electrical model
,
A. AppendixReferences -- Authors' biographies.
,
Nomenclature1. Temperature dependencies of material and device parameters -- 1.1 Introduction -- 1.2 Temperature dependencies -- 1.2.1 Intrinsic carrier concentration -- 1.2.2 Ionized donor impurity concentration -- 1.2.3 Carrier mobility -- 1.2.4 Lifetime -- 1.2.5 Emitter recombination parameters -- 1.2.6 Threshold voltage and transconductance
,
Also available in print.
,
Mode of access: World Wide Web.
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System requirements: Adobe Acrobat Reader.
Additional Edition:
ISBN 9781627051897
Additional Edition:
Erscheint auch als Druck-Ausgabe Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices
Language:
English
Keywords:
Electronic books
DOI:
10.2200/S00547ED1V01Y201311PEL006
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