UID:
almafu_9959239835202883
Format:
1 online resource (476 p.)
ISBN:
1-84816-224-3
Content:
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device
Note:
Description based upon print version of record.
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Preface; CONTENTS; Chapter 1 An Overview of the Development of Major Light Sources: From Light Bulbs to Solid State Lighting Y. S. Liu; 1. Introduction; 1.1 Major milestones in the development of light sources; 2. Incandescence light bulbs; 3. Fluorescence light; 4. Coherent light sources: semiconductor lasers; 5. GaN-based blue and white LED; 6. DOE ALITE 1995; 7. Japan MITI's "21st Century Solid State Lighting Project" 1998; 8. USA Next Generation Lighting Initiative Alliance (NGLIA); 9. China's National SSL Program 2006; 10. Taiwan's solid state lighting program
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10.1 GaN-based solid state lighting research10.2 Next Generation Semiconductor Lighting Research and Development Consortium (2002-2005); 11. Conclusion; References; Chapter 2 High Pressure Bulk Crystal Growth of (Ga,Al)N P. Geiser, J. Jun, B. Batlogg and J. Karpinski; 1. Introduction; 2. The group-III nitrides AlN, GaN and InN; 2.1 Crystal structure; 2.2 Material properties, defects and dopants; 2.3 Direct synthesis of group-III nitrides; 3. Growth of group-III nitride bulk single crystals; 3.1 High nitrogen pressure apparatus for crystal growth (HNPSG)
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3.2 Cubic anvil cell for AlxGa1-xN crystal growth (CAC)4. Results and discussion; 4.1 AlxGa1-xN bulk single crystals, growth results; 4.2 Material characterization; 4.3 Parameters influencing the Al content in AlxGa1-xN; 4.4 Suppression of crystal growth in Ga1-yAly alloys with y 〉 0.01; 4.5 GaN bulk single crystals; 5. Conclusions and outlook; Acknowledgments; References; Chapter 3 Structural and Optical Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition Z. C. Feng, J. R. Yang, A. G. Li and I. T. Ferguson; 1. Introduction
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2. Experimental3. Structural properties of InGaN/GaN MQWs; 3.1 High resolution X-ray diffraction (HRXRD); 3.2 High resolution transmission electron microscopy (HRTEM); 3.3 High-angle annular dark field (HAADF) images; 4. Optical properties of InGaN/GaN MQW LEDs; 4.1 Temperature dependent photoluminescence; 4.2 PL band shifts and quantum efficiency; 4.3 Excitation-power-dependent photoluminescence of InGaN/GaN green LED wafer; 4.4 Different T-behavior of photoluminescence from InGaN/GaN green and blue LED wafers; 5. Special electron microscopy of InGaN/GaN MQWs; 5.1 V-shape defects
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5.2 TEM digital analysis of lattice images (DALI)5.3 Different TEM Studies on InGaN-based LEDs; 6. Special luminescence spectroscopy of InGaN/GaN MQWs; 6.1 Photoluminescence excitation (PLE) spectroscopy; 6.2 PLE fitting and quantum confined Stokes effect; 6.3 Temperature dependent time resolved photo-luminescence; 6.4 Decay time versus temperature; 6.5 Detection energy dependent time resolved Photoluminescence; 7. Summary; Acknowledgments; References; Chapter 4 MOCVD Growth and Efficiency Improvement for Ultraviolet Light Emitting Diodes S. J. Park and M. K. Kwon; 1. Introduction
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2. Issue of InGaN, AlInGaN, AlGaN material system
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English
Additional Edition:
ISBN 1-84816-223-5
Language:
English
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