Kooperativer Bibliotheksverbund

UID:

Format: 1 online resource (598 p.) : , With 470 Figures and 44 Tables

Edition: Reprint 2022

ISBN: 9783112611203

Series Statement: Physical Research ; 8

Note: Frontmatter -- , CONTENTS -- , 1. Invited papers -- , EPM'87 - STATE OF THE ART -- , ACCELERATION OF MICROPARTICLES -- , STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS -- , MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS -- , IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON -- , DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND -- , COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION -- , MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION -- , FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION -- , PULSED ION IMPLANTATION OF SILICON WITH SELENIUM -- , RAPID THERMAL PROCESSING FOR VLSI APPLICATION -- , SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS -- , EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS -- , THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION -- , MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN -- , ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS -- , APPLICATIONS OF MICROFOCUSSED ION BEAMS -- , STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT -- , MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS -- , 2. Implantation into silicon -- , RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON -- , DEFECT FLUX EFFECTS DURING ION IMPLANTATION -- , IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT -- , 6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON -- , ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS -- , HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON -- , DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES -- , JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING -- , A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION -- , EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON -- , 3. Implantation and annealing of compound semiconductor -- , RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER -- , SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs -- , INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS -- , INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs -- , Short time threshold for electrical activation of implanted and annealed GaAs -- , ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS -- , FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE -- , RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT -- , HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs -- , 4. Implantation into metals -- , FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS -- , STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS -- , STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL -- , WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS -- , TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS -- , MICROSTRUCTURE OF TI-IMPLANTED FE -- , DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL -- , INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON -- , CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS -- , WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS -- , HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS -- , COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS -- , AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS -- , Implantation effects on microcrack initation in fatigued metals -- , STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P+ IONS -- , 5. Transient heat treatment of semiconductors -- , ANNEALING OF LASER INDUCED DEFECTS IN SILICON -- , ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON -- , ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS -- , CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON -- , IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM) -- , Laser beam induced microdefects in silicon detected by SEM and TEM -- , RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON -- , THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA -- , INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES -- , ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING -- , NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING -- , TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON -- , COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON -- , INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING -- , THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS -- , ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING -- , ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION -- , NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS -- , THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING -- , MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON -- , PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION -- , EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA -- , ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING -- , RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS -- , 6. Formation of silicides -- , THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi2 LAYERS -- , LIQUID PHASE GROWTH OF FeSi2 -- , LIQUID PHASE GROWTH OF NiSi2 AND CoSi2 -- , FORMATION OP EPITAXIAL NiSi2 LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING -- , REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi2/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING -- , R.B.S. STUDIES OF WSi2 FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN -- , ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr+ IONS AFTER LASER ANNEALING -- , CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES -- , 7. Ion beam assisted deposition and ion beam mixing -- , COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON -- , I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING -- , ION MIXING IN GLASSES -- , ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD -- , ION MIXING IN Cu/Au MULTILAYERED THIN FILMS -- , A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED -- , INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD -- , MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING -- , Computer simulation and and experimental measurements of recoil implantation of gold into silicon -- , 8. , Deposition, modification and structurization -- , ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS -- , STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr+- AND Fe+-IONS -- , ION BOMBARDMENT INDUCED MODIFICATION OF La6 -- , Pyrolitic laser deposition of tungsten -- , PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS -- , MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES -- , HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION -- , TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS -- , THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION -- , EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV -- , CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY -- , ON DEFECTS AND STRESSES IN THIN FILMS -- , ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD -- , 9. Silicon on insulator (SOI) -- , ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION -- , FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS -- , MODELING OF 18O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION -- , IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON -- , THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY -- , MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE -- , INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO2 -- , ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS -- , A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON -- , PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S -- , PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON -- , COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION -- , STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING -- , High Throughput CO2 laser Recrystallization for 3D integrated Devices -- , FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi2 BY ION IMPLANTATION -- , 10. Diagnostics and ion microfocus beam -- , EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS -- , CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS -- , CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION -- , POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS -- , QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO2/Si-STRUCTURES -- , HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES -- , A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY -- , THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS -- , MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE -- , CLUSTER IONS IN LASER MASS SPECTRA OF WO3/C TARGETS -- , ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF 4+CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING -- , A MaV ION PROBE AT TU PRAGUE -- , 11. Fundamentals -- , COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES -- , MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION -- , ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION -- , TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY -- , MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON -- , INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING -- , INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING -- , NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE -- , SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT -- , PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON -- , THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES -- , MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON -- , LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY -- , THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT -- , AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS -- , 12. Miscellaneous -- , LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM -- , ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES -- , SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON -- , LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS -- , LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS -- , MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS -- , STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS -- , 13. Author Index -- , Backmatter , Issued also in print. , In English.

Additional Edition: ISBN 9783112611197

Language: English

DOI: 10.1515/9783112611203

URL: https://doi.org/10.1515/9783112611203

URL: https://www.degruyter.com/isbn/9783112611203

URL: https://doi.org/10.1515/9783112611203

URL: https://www.degruyter.com/isbn/9783112611203

UID:

Format: 1 online resource (594 p.)

Edition: Reprint 2021

ISBN: 9783112575666

Series Statement: Physical Research ; 13

Note: Frontmatter -- , CONTENTS -- , INVITED PAPERS -- , EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- , SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- , SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- , ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- , ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- , NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- , CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- , PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- , BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- , PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- , RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- , THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- , ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- , THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- , STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- , IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- , SUBMITTED PAPERS -- , 1. IMPLANTATION INTO SILICON -- , STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- , STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- , GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- , IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- , RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- , ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- , In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- , DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- , INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- , LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- , ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- , CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- , APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- , PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- , SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- , EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- , 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- , RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- , PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- , MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- , AMORPHIZATION OF CD-IMPLANTED GAAS -- , Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- , APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- , GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- , INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- , MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- , DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- , CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- , 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- , INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- , LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- , HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- , 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- , INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- , ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- , INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- , ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- , ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- , RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- , DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- , 4. SILICIDES -- , INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- , PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- , LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- , FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- , MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- , QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- , REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- , 5. IMPLANTATION INTO METALS -- , SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- , CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- , STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- , IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- , TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- , IMPLANTATION INDUCED TEXTURE -- , SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- , PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- , RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- , WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- , STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- , STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- , EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- , AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- , 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- , THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- , SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- , THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- , STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- , MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- , EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- , ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- , LASER BEAM MODIFICATION OF OPTICAL FILMS -- , MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- , STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- , EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- , CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- , 7. MATERIALS DEPOSITION -- , RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- , ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- , SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- , ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- , LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- , METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- , CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- , MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- , FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- , 8. , SILICON ON INSULATORS -- , HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- , A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- , TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON—INSULATOR FORMATION BY MILLISECOND HEATING -- , SOI STRUCTURES FORMATION BY PULSED HEATING -- , FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- , THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- , SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- , OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- , STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- , THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- , 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- , HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- , HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- , FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- , IN SITU XPS AND LEED STUDY OF Si/SiC〉2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- , HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- , LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- , DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- , QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- , PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- , A LITHIUM LIQUID METAL ION SOURCE -- , PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- , ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- , PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- , PLASMATRON ION SOURCE FOR ION IMPLANTATION -- , CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- , CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- , LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- , INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- , HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- , AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- , 10. HIGH TEMPERATURE SUPERCONDUCTORS -- , LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- , EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- , ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- , PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- , FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- , PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- , FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- , SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- , 11. FUNDAMENTALS -- , COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- , DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- , ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- , A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- , PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- , COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- , THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- , TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- , THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- , RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- , IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- , AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- , ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- , THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- , MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- , NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- , ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- , DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- , PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- , THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- , NUCLEATION A? VARYING TEMPERATURES -- , MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- , ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- , NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- , A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- , MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- , LATE PAPER -- , A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- , Author -- , Physical Research , In German.

Additional Edition: ISBN 9783112575659

Language: German

DOI: 10.1515/9783112575666

URL: https://doi.org/10.1515/9783112575666

URL: https://www.degruyter.com/isbn/9783112575666

URL: https://doi.org/10.1515/9783112575666

URL: https://www.degruyter.com/isbn/9783112575666

UID:

Format: 1 online resource (528 p.)

Edition: Reprint 2021

ISBN: 9783112493106

Series Statement: Physica status solidi / A. ; Volume 64, Number 1

Note: Frontmatter -- , Contents -- , Author Index -- , Twenty Five Years of Semiconductor-Grade Silicon -- , Etude de la phase a des alliages Cu-Al -- , Analytic Approximations for Describing the Irradiation Growth of Zirconium-Base Alloys (II) -- , On the Nature of Colour Centres in Ultramarine and Blue Alkali Borate Glasses Containing Sulphur -- , Formation of Ultrathin Oxide Films on Silicon in RF Oxygen Plasma -- , On the Possibility of Having Phasers -- , DLTS Method Using a Single Temperature Scanning -- , Electrical Resistivity of Fe-Rich Fe-Pd Alloys between 77 and 1250 K -- , Factors Affecting Microhardness Measurements on NaCl Crystals -- , Micro Inversion Domains Formed during the Crystallization of the Amorphous Alloy Fe40Ni40P14B6 -- , Activation Energy and Activation Volume of Dislocation Movement through Randomly Distributed Point Obstacles -- , Thermoluminescence of Z2 Centers in X-Irradiated Ca-Doped KCl Crystals -- , X-Ray Diffraction Study of Debye Temperature and Charge Distribution in Tantalum Monocarbide -- , The Annealing Characteristics of Arsenic-Implanted Silicon Investigated at Low Temperatures -- , On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 °C -- , Electrical Conduction in Reactively Sputtered Silicon Nitride Films at Medium Field Strengths -- , Magnetic Relaxation in Electron-Irradiated Ordered Ni3Fe -- , On the Effect of Halogens on Proton Processes in the Si-SiO2 Structures -- , Impurity Diffusion of AI in Ni Single Crystals Studied by Secondary Ion Mass Spectrometry (SIMS) -- , Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System -- , Modulation-Spectroscopic Investigations of Defect Centres in PbMoO4 Crystals -- , Dotierungseigenschaften von Eisen in Silizium -- , Diffusion and Solubility of Chromium 51 in Silver Single Crystals -- , Surface Erosion during Annealing of MIIIXV:FIIb Systems and Its Reduction -- , A New Attempt for Understanding Temperature-Dependent Thresholds in Lead Salt Injection Lasers -- , Electrical Properties of Grain Boundaries in n-Type and p-Type GaP -- , Investigation of the K2NiF4-Type Layer Oxide Fluorides Sr2FeO3+zF1-x(0〈x〈0.20) -- , About the Asymmetries in Mossbauer Spectra of Magnetic Amorphous Transition Metal-Metalloid Alloys -- , Etude des franges de moirés en microscopie électronique par la théorie dynamique á N ondes et application aux doubles couches Sb-Bi -- , Dielectric Dependence of EL Brightness of Powdered Phosphor and Particle Size Distribution -- , Color Centers in Irradiated Durene Crystals -- , Conductivity and Crystallization of Amorphous Selenium -- , Recrystallization near Low-Angle [001] Tilt Boundaries Following Cobalt Implantation in Bicrystalline Thin Films of Gold -- , Môssbauer Study of the Temperature Dependence of the Magnetization Direction and the Hyperfine Interactions in the Laves Phase Compound GdFe2 -- , The Elastic Constants of Ni3Al at 0 and 23.5 °C -- , Induced Perpendicular Anisotropy and Surface Crystallization in Amorphous Fe78B12Si10 Ribbons -- , Errors Due to Lack of Contact in Measurements of Dielectric Relaxation Parameters for Solid Powders -- , On the Theory of External Photoeffect Accompanying X-Ray Diffraction in an Ideal Crystal with Disturbed Surface Layer -- , Crystal and Magnetic Structure of the NiMnGe1-nSin System -- , High-Pressure Polymorphism of Antimony -- , The Scattering of Ultrasonic Waves by Polycrystals -- , Mechanoluminescence and Piezoelectric Behaviour of Molecular Crystals -- , Laser Annealing of Silicon Wafers at 10.6 μm -- , Effect of Quenching and X-Ray Irradiation on the Dielectric Properties of Pbl2 Single Crystals -- , Erratum -- , Erratum -- , Drift Mobility in Insulating Barium Titanate Ceramics -- , Observation of Ferroelectric Domains in Gel Grown PbHPO4 Crystals -- , Investigation of the Ec - 0.55 eV Level of Iron in Silicon -- , Effect of Hydrostatic Pressure on the Electrical Resistivity of Cr and Cr-Co Alloys at Room Temperature -- , Far Infrared Spectra of NH4HSeO4 -- , The Effect of Neutron Irradiation on the Electrical Resistivity of Amorphous Fe47Ni25B18Si10 Alloys -- , Electrical Properties of Quinolinium (TCNQ)2 -- , The Mean Kinetic Energy of Sputtered Atoms as a Function of the Angle of Emission -- , Untersuchung des homogenen Gebietes in unlegiertem Galliumantimonid -- , Occurrence of AC Loss Minimum in Type II Superconductors -- , The Fine Structure of the 0.84 eV No-Phonon Luminescence in GaAs:Cr -- , Inductance of Small Window Type Tunnel Junctions -- , 1/f Noise in Si Avalanche Diodes at X-Band -- , On the Possible Mechanism of Misfit Dislocation Generation -- , Saturated Open Circuit Photovoltage - a New Method for Measuring the Carrier Lifetime at High Excitation Level -- , Modification of the Dislocation Luminescence Spectrum by Oxygen Atmospheres in Silicon -- , Evidence for Glide of Charged Dislocations on {111} Planes in NaCl Crystals -- , High-Speed Electron Beam Annealing of Arsenic and Gallium Implanted Silicon -- , Infrared Absorption of Hydrogen in Proton-Implanted GaP -- , On the Effect of Phase Transformation on the Steady State Creep of Cobalt -- , Differences in Plastic Deformation Behaviour of CZ- and FZ-Grown Silicon Crystals -- , Of papers to b': published in the next issues of physica status solidi (a) and physica status solidi (b) -- , Backmatter , In English.

Additional Edition: ISBN 9783112493090

Language: English

DOI: 10.1515/9783112493106

URL: https://doi.org/10.1515/9783112493106

URL: https://www.degruyter.com/isbn/9783112493106

URL: https://doi.org/10.1515/9783112493106

URL: https://www.degruyter.com/isbn/9783112493106

UID:

Format: 1 online resource (364 p.)

Edition: Reprint 2021

ISBN: 9783112495605

Series Statement: Physica status solidi / A. ; Volume 109, Number 2

Note: Frontmatter -- , Contents -- , Original Papers -- , Defects; nonelectronic transport -- , The Protonic Conductivity of Heavily KOH-Doped Ice -- , Radiation Enhanced Dislocation Glide Effect on Indentation-Induced Fracture of GaAs Single Crystals -- , Implanted Impurity Behaviour in Silicon Subjected to Transient Heating -- , "In Situ" Determination of Grain Boundary Migration Rates by Synchrotron White Beam X-Ray Topography -- , Thermally Stimulated Relaxation in NaF X-Irradiated at Boom Temperature -- , Notes on the Carbon-Associated Deep Level Complex in Irradiated Silicon -- , Lattice properties -- , In Situ TEM Studies of Para-Ferro Phase Transitions in NaNbO3 -- , Direct Observation of α-ß Phase Transition in KNbW2O9 by Transmission Electron Microscopy -- , Relations between Anisotropic Defects, Structural Evolution, and van der Waals Bonding in 2H-NbSe2 -- , Surfaces, interfaces, thin films; lower-dimensional systems -- , Structure and Optical Properties of Mo03 Thin Films Prepared by Chemical Vapor Deposition -- , Heterostructures on the Basis of Indium Arsenide with Semi-Insulating A^PBJ1 Compound Layers -- , Optical Properties of Amorphous Thin Films of MoO3 Deposited by Vacuum Evaporation -- , On the Si-SiO2 Interface Roughness in VLSI-MOS Structures -- , Thermal Mismatch Biased Rhombohedral Structure of Strained Epitaxial CaF2 Films on Si(111) -- , Preparation of High-Tc Y-Ba-Cu-0 and Bi-Sr-Ca-Cu-0 Thin Films by RF-Magnetron Sputtering -- , The Effects of Heat Treatment on the Structural Properties of Amorphous In 0.8 Se 0.7 Films -- , Temperature Coefficient of the Strain Coefficient of Electrical Resistivity of Double-Layer Thin Metallic Films -- , Determination of Concentration-Dependent Diffusion Coefficients from Thin Film/Substrate Interdiffusion -- , Localized electronic states -- , Deep Electronic Levels in Carbon-Implanted Silicon -- , Electrical and Paramagnetic Properties of Thermodonors-II in Silicon -- , Electronic transport; superconductivity -- , Electrical and Optical Properties of Natural Iron Pyrite (FeS2) -- , Magnetic properties; resonances -- , Temperature Dependence of Magnetization in Amorphous Co-Fe-Si-B Alloys -- , On the Effect of Al Addition on the Phase Composition and Magnetic Properties of Nd-Fe-B Permanent Magnet Alloys -- , A Study of Induced Magnetic Anisotropy in Gallium-Iron Ferrites above Room Temperature -- , Magnetic Structure of the Orthosilicates Mn2SiO4 and Co2SiO4 -- , Dielectric and optical properties -- , Influence of Ion Implantation on the Luminescence of GaAs -- , Influence of Temperature on the Aggregation Processes of the NaCl:Eu 2+ System -- , Effective Temperature of Polarization in Measurements of Thermally Stimulated Depolarization Currents -- , Temperature Dependence of the 2.5 eY Emission Band in Se-Treated ZnSe Crystals -- , Unified Theoretical Description of EBIC, LBIC, CL, and PL Experiments -- , IR and Polarized Raman Spectra of (NH4)2Mg(SO4)2· 6 H2O -- , Short Notes -- , On the Structure of the Cg Cubic Modification of Carbon -- , Variation of the Polarisation Ratio with Different Diffraction Parameters -- , Second Order Moiré Analysis -- , On Pore Formation in Thin Film/Substrate Interdiffusion at Low Temperatures -- , Zn 0.15 Cd 0.85 S Thin Films by RF Sputtering in an Ar-H2 Atmosphere -- , A Surface Effect in CaSO4:Mn/PVDF Mixtures -- , Defects in GaP Green Light-Emitting Diodes -- , Additional Deep Level in Strongly Indium-Doped Lead Tin Telluride -- , Effect of the Electrode on the Electrical Conduction Process in Organic Semiconductors -- , Positron Trapping in YBa2Cu3Ox Superconductors -- , Positron Annihilation in Thermally Quenched YBa2Cu3O 7-x -- , The Magnetic Resonance of Fe2V 4-x MoxO13 Type Phase -- , Hysteresis Loops of Fine Particle Magnets of the Type NdFeB -- , Coercivity of Ion Implanted Cobalt Films -- , On the Influence of a Buffer Layer on the Emissive Properties of Epitaxial Layers in InGaAsP (λ = 1.1'. μm) -- , Pre-Printed Titles , In English.

Additional Edition: ISBN 9783112495599

Language: English

DOI: 10.1515/9783112495605

URL: https://doi.org/10.1515/9783112495605

URL: https://www.degruyter.com/isbn/9783112495605

URL: https://doi.org/10.1515/9783112495605

URL: https://www.degruyter.com/isbn/9783112495605

UID:

Format: 1 online resource (438 p.)

Edition: Reprint 2021

ISBN: 9783112480823

Series Statement: Physica status solidi / A. ; Volume 106, Number 1

Note: Frontmatter -- , Author Index -- , Contents -- , Original Papers -- , Structure; crystallography -- , Low Pressure Chemical Vapour Deposition Amorphous Silicon Behaviour under Annealing -- , Lattice Parameters of Fe-Si Alloy Single Crystals -- , Dynamical and Kinematical X-Ray Diffraction in Crystals Strongly Disturbed by Ultrasonic Vibrations -- , X-Ray Standing Waves under the Conditions of Multiple Diffraction -- , X-Ray Interferometric Investigations of Structural Distortions in Semiconductor Crystals Caused by Constant Electric and Magnetic Fields -- , On the Visibility of Edge Fringes in Strong Beam Images of Intrinsic and Extrinsic Stacking Faults in F.C.C. Structures -- , Defects; nonelectronic transport -- , Ion-Beam Induced Silver Doping in the Ag2Se/CreSe2-Resist System -- , Radiation Damage of Bisglycine Cadmium Chloride Single Crystals An EPR Study -- , lettering of Copper in Proton- and Helium-Bombarded Buried Regions of Gallium Phosphide -- , Positron Study of Vacancy Defects in Proton and Neutron Irradiated GaP, InP, and Si -- , Influence of Mg Doping and Composition on the Light-Induced Charge Transport in LiNbO2 -- , Lattice properties -- , Thermal Expansion of (FeM)80B14Si4 Metallic Glasses (M = Y, Cr, Mn) -- , Thermal Vibrations and Thermal Expansion of ZrC0.98 Studied by X-Ray Diffraction -- , Low Temperature Thermal Conductivity of Metallic Glasses FexNi80-xB20 -- , Surfaces, interfaces, thin films; lower-dimensional systems -- , Reactively Evaporated Films of Indium Sulphide -- , Segregation and Sputter Effects on Perfectly Smooth (111) and (100) Surfaces of Au-Ag Alloys Studied by AES -- , Studies on the Stability of Discontinuous Silver Films with Overlayers of Al2O8 and SiO2 -- , Localized electronic states -- , Deep Level Profiling Using an Admittance Spectroscopy Method -- , Determination of Trap Concentrations and Energy Levels in Insulators and Semiconductors from Steady-State Space-Charge-Limited Currents -- , Calculation of Electrostatic Crystal Field Parameters of Rare Earth Hydrated Single Crystals -- , Thermally Stimulated Exo-EIectron Emission and Thermally Stimulated Luminescence of Irradiated a-Al2O3 Powder -- , Electronic transport; superconductivity -- , The Electronic and Optical Properties of Germanium Tellurite Glasses Containing Various Transition Metal Oxides -- , Magnetic properties; resonances -- , Anomaly in the Magnetic Properties of the YCo4B Compound -- , Magnetic Instability of Metallic Glass (Fe0.1Ni0.33CO0.55 Cr0.02 ) 78Sis8B14 -- , Characterization of Diamagnetically Substituted (Na+, Te4+, Cl~) Lithium Ferrite -- , On the Stabilization of a Vertical Bloch Line Fair in a Domain Wall in an Ion-Implanted Garnet Film -- , Magnetic Susceptibility of Amorphous Cu1-xYx Alloys -- , Dielectric and optical properties -- , Micromagnetics of Cylindrical Particles -- , Peculiarities of Radiative Recombination in Gallium Arsenide Doped with Shallow Donors and Acceptors -- , Raman Study of Disorder in Laser-Annealed III-Y Semiconductors -- , Some Peculiarities of Photo-Transfer Thermoluminescence in LiF-TLD 100 -- , On the Irreversibility of the Processes during Photomagnetization of Ferrites -- , The 2.5 eV Emission Band in the Se-Treated ZnSe Crystals -- , Symmetry Factor and Order of Kinetics in Thermally Stimulated Luminescence -- , Device-related phenomena -- , Charge Transport Study in Thin Film Au-CdTe Schottky Diodes -- , Short Notes -- , Defects; nonelectronic transport -- , Positron Annihilation Lifetime and Doppler Broadening Studies of Electron-Irradiated Polypropylene -- , Defocusing of Atomic Knock-Ons in Crystals with Low Local Symmetry of Structural Elements -- , Lattice properties -- , Remarks on the Nature of the High Internal Friction Peak near Tg in Glassy Alloys -- , Temperature Dependence of the Effective Stress for KC1 Single Crystals -- , Surfaces, interfaces, thin films; lower-dimensional systems -- , Argon Ion Effect on Solid Phase Reaction in Copper-Tin, Copper-Antimony Films -- , Natural Surface Films on GeS -- , Influence of Interface States on the Electrical Properties 21 of Mg-Zn3P2 Junctions -- , Photoelectrochemical Etching of n-GaAs and n-InP -- , Electrical Conduction in Germanium Dioxide Thin Films -- , Electronic transport; superconductivity -- , On the Application of the Ordinary and Photoconductivity Meyer-Neldel Rule to Amorphous Ge30Se60Te10 Films -- , X-Ray Diffraction and EDS Analysis of Y1Ba2Cu3O9-y Superconducting Compound -- , EPR Investigations on High Temperature Superconducting YBa2CU3O7-x -- , Magnetic properties; resonances -- , Influence of the Melt Temperature on the Formation of Soft Magnetic Properties of an Amorphous Fe40Ni40P14B6 Alloy -- , Effect of Mg-Fe Replacement in the System MgxZn0.3Fe(2.7-x)O4+6 Barkhausen Jumps -- , Neutron Diffraction Studies of 0.2 Titanium Substituted Lithium Ferrite -- , Relations between Some Galvanomagnetic and Magnetic Properties of Thin Ferromagnetic Films -- , On the Determination of the Curie Temperature of Anisotropic Ferromagnets -- , Dielectric and optical properties -- , Photoluminescence in P-Hg0.42Cd0.58Te -- , Strong Antiparallel Correlation in Liquid Crystalline Esters with Lateral Groups -- , Broadband Tuning in an Infrared Parametric Oscillator -- , The Electroluminescence of ZnS:Pb,Cu,Br Phosphors -- , Dielectric Properties of Synthetic Quartz Crystals Irradiated with y-Rays or X-Rays under a High Electric Field -- , Thermoluminescence in Synthetic Langbeinite -- , Device-related phenomena -- , Determination of Temperature-Dependent Carrier Losses in 1.3 μm InGaAsP/InP Double-Heterostructures -- , Pre-Printed Titles -- , of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- , Backmatter , In German.

Additional Edition: ISBN 9783112480816

Language: German

DOI: 10.1515/9783112480823

URL: https://doi.org/10.1515/9783112480823

URL: https://www.degruyter.com/isbn/9783112480823

URL: https://doi.org/10.1515/9783112480823

URL: https://www.degruyter.com/isbn/9783112480823

UID:

Format: 1 online resource (420 p.)

Edition: Reprint 2021

ISBN: 9783112501368

Series Statement: Physica status solidi / A. ; Volume 85, Number 1

Note: Frontmatter -- , Classification Scheme -- , Author Index -- , Contents -- , Review Article -- , Effect of Dislocation Structure on Creep and Fracture of Metals and Alloys -- , Original Papers and Short Notes -- , Structure -- , The Nature of Some Planar Defects in 2H Martensite of Cu-Al Alloys as Determined by HREM -- , Partial Higher-Order Structure Factors in the Long-Wavelength Limit for Molten Cuprous Chloride -- , Quantitative Interference Electron Microscopy for Spherical Objects -- , Analysis of the Ground State of a Solid Solution with Interactions up to fc-th Coordination Spheres of the Crystal Lattice -- , A Dark-Field TEM Method for Crystal Structure Determination of Cu-Rich Phases on Twins in Silicon -- , Structural and Chemical Analysis of a Silicon Nitride Film on GraAs by Null Ellipsometry -- , Coherence Properties of Radiation Diffracted by an Elastically Bent Crystal -- , Defect Structure of ZnSe Crystals Investigated by Electron Microscopy -- , Lattice properties -- , Monocrystal-Polycrystal Elastic Constants of a Stainless Steel -- , Structure and Molar Refraction and Its Wavelength Dependence at Different Alkali and Ammonium Halides -- , Defects, atomistic aspects -- , Kinetics of Vacancy Mechanism of the Solid-Liquid Transition in F.C.C. Metals -- , On the Identification of the Nature of Stacking Faults in H.C.P. Materials -- , Dislocation Pinning at Low Temperatures in Nb -- , Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen Concentrations -- , Steady-State Creep and Strain Transients for Stress-Dip Tests in Polycrystalline Magnesium at 300 °C -- , Structural Vacancies in Nonstoichiometric Compounds at High Pressure -- , Effect of Ionizing Radiation on Optical Properties of Thallium Halides in the 0.36 to 15 μm Range -- , Magnetism -- , Yttrium Iron Garnet Films Substituted by Gd and Mn -- , Method for Measurement of Magnetostriction Constants in (001) Thin Films Using FMR -- , On the Inhibition of Dynamic Conversion in Bubble Garnet Domains by a Thin Midplane Layer -- , Extended electronic states and transitions -- , Energy-Depth Relation of Electrons in Bulk Targets by Monte-Carlo Calculations -- , Temperature Dependence of Interband Optical Absorption of Silicon at 1152, 1064, 750, and 694 nm -- , Kilovolt Electron Energy Loss Distribution in GaAsP -- , Localized electronic states and transitions -- , Electrical Measurements on Silver-Diffused GaAs -- , Analysis of DLTS Curves of Aggregated Deep Level Impurities -- , Origin of a Shallow Acceptor in Quenched Germanium -- , Photoluminescence and Electrical Properties of Yapour Phase Epitaxial ZnSe Grown on GaAs -- , Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe -- , Effect of the Stoichiometry Control on the Photoelectrical Properties of ZnSxSe 1-x -- , Time-Resolved EPR on Polyacetylene -- , Two Types of F-Centres and Thermoluminescence in BaFCl Crystals -- , Energy Transfer between Excited Adsorbed Dye Molecules and Charged Defects in Insulator-Semiconductor Structures -- , Electric transport -- , AC Conductivity in Single Crystals and Compactions of TCNQ Complex Salts -- , Conductivity in One-Dimensional Disordered Cs2TCNQ3 Salts -- , Intensity and Temperature Dependence of Steady-State Photoconductivity Down to 8 K and DOS Distribution Obtained from These Measurements in a-Si:H -- , Short Notes -- , Formation of Pt Silicides by a Millisecond Laser Pulse -- , The Neutron Diffraction of Molten TlCl, TIBr, and Tll -- , In Vitro Characterization of Bioactivity of Glassy or Glass-Crystalline Implant Materials Using Auger Electron Spectroscopy -- , DC Plasma Nitridation of Thin Aluminium Films -- , Influence of Work Function Change Due to Oxygen Chemisorption on the Secondary-Ion Emission Probability -- , On X-Ray Surface Diffraction -- , Strain-Optical Constant ( p ^ ) of Mixed Crystals of KCl-KBr of Equimolar Concentration -- , Qbservation of RF Pulses from Solids during Laser Irradiation -- , Damage and Trapping Behaviour of Crystalline Silicon at Low Energy Deuterium Implantation -- , Defect Structure Study with Planar Channeling in Pulse-Annealed Ion-Implanted Silicon -- , Influence of Dislocation Core Density on Overheating Absence -- , Relaxation Time and Electron Scattering Cross Section in Irradiated p-Silicon at Temperatures of Liquid Helium from Cyclotron Resonance Data -- , Temperature Dependence of the Charge-Carrier'Removal Rate in n-GaAs Containing Defect Clusters -- , Structure and Magnetic Properties of Nd2Fe14BH 2.7 -- , The Usefulness of the Photoacoustic Cell for Magnetic Measurements -- , Crystallographic, Magnetic, and Electrical Properties of Nickel-Substituted Chromium Telluride -- , Fluorescence Decay of Adsorbed Dye Molecules on Solid Surfaces -- , Cathodoluminescence of InGaAsP -- , Bipolar Photoconductivity and Hall Effect of the Acoustoelectric Current in CdTe -- , Relaxation Peculiarities in TlSbSe2 Crystals -- , Electrical Resistivity Studies on the Heusler Alloys Co2T 1-x Al 1+x(T = Ti or Zr) -- , Current-Voltage Characteristic of the p-n Junction with an Exponential Impurity Distribution at Its Base Contact -- , Pre-Printed Titles , In English.

Additional Edition: ISBN 9783112501351

Language: English

DOI: 10.1515/9783112501368

URL: https://doi.org/10.1515/9783112501368

URL: https://www.degruyter.com/isbn/9783112501368

URL: https://doi.org/10.1515/9783112501368

URL: https://www.degruyter.com/isbn/9783112501368