UID:
almafu_9960796620502883
Format:
1 online resource (598 p.) :
,
With 470 Figures and 44 Tables
Edition:
Reprint 2022
ISBN:
9783112611203
Series Statement:
Physical Research ; 8
Note:
Frontmatter --
,
CONTENTS --
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1. Invited papers --
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EPM'87 - STATE OF THE ART --
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ACCELERATION OF MICROPARTICLES --
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STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS --
,
MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS --
,
IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON --
,
DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND --
,
COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION --
,
MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION --
,
FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION --
,
PULSED ION IMPLANTATION OF SILICON WITH SELENIUM --
,
RAPID THERMAL PROCESSING FOR VLSI APPLICATION --
,
SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS --
,
EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS --
,
THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION --
,
MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN --
,
ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS --
,
APPLICATIONS OF MICROFOCUSSED ION BEAMS --
,
STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT --
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MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS --
,
2. Implantation into silicon --
,
RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON --
,
DEFECT FLUX EFFECTS DURING ION IMPLANTATION --
,
IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT --
,
6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON --
,
ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS --
,
HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON --
,
DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES --
,
JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING --
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A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION --
,
EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON --
,
3. Implantation and annealing of compound semiconductor --
,
RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER --
,
SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs --
,
INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS --
,
INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs --
,
Short time threshold for electrical activation of implanted and annealed GaAs --
,
ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS --
,
FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE --
,
RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT --
,
HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs --
,
4. Implantation into metals --
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FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS --
,
STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS --
,
STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL --
,
WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS --
,
TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS --
,
MICROSTRUCTURE OF TI-IMPLANTED FE --
,
DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL --
,
INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON --
,
CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS --
,
WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS --
,
HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS --
,
COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS --
,
AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS --
,
Implantation effects on microcrack initation in fatigued metals --
,
STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P+ IONS --
,
5. Transient heat treatment of semiconductors --
,
ANNEALING OF LASER INDUCED DEFECTS IN SILICON --
,
ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON --
,
ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS --
,
CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON --
,
IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM) --
,
Laser beam induced microdefects in silicon detected by SEM and TEM --
,
RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON --
,
THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA --
,
INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES --
,
ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING --
,
NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING --
,
TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON --
,
COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON --
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INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING --
,
THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS --
,
ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING --
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ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION --
,
NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS --
,
THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING --
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MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON --
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PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION --
,
EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA --
,
ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING --
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RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS --
,
6. Formation of silicides --
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THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi2 LAYERS --
,
LIQUID PHASE GROWTH OF FeSi2 --
,
LIQUID PHASE GROWTH OF NiSi2 AND CoSi2 --
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FORMATION OP EPITAXIAL NiSi2 LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING --
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REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi2/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING --
,
R.B.S. STUDIES OF WSi2 FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN --
,
ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr+ IONS AFTER LASER ANNEALING --
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CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES --
,
7. Ion beam assisted deposition and ion beam mixing --
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COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON --
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I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING --
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ION MIXING IN GLASSES --
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ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD --
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ION MIXING IN Cu/Au MULTILAYERED THIN FILMS --
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A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED --
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INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD --
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MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING --
,
Computer simulation and and experimental measurements of recoil implantation of gold into silicon --
,
8.
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Deposition, modification and structurization --
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ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS --
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STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr+- AND Fe+-IONS --
,
ION BOMBARDMENT INDUCED MODIFICATION OF La6 --
,
Pyrolitic laser deposition of tungsten --
,
PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS --
,
MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES --
,
HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION --
,
TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS --
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THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION --
,
EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV --
,
CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY --
,
ON DEFECTS AND STRESSES IN THIN FILMS --
,
ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD --
,
9. Silicon on insulator (SOI) --
,
ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION --
,
FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS --
,
MODELING OF 18O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION --
,
IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON --
,
THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY --
,
MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE --
,
INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO2 --
,
ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS --
,
A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON --
,
PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S --
,
PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON --
,
COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION --
,
STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING --
,
High Throughput CO2 laser Recrystallization for 3D integrated Devices --
,
FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi2 BY ION IMPLANTATION --
,
10. Diagnostics and ion microfocus beam --
,
EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS --
,
CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS --
,
CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION --
,
POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS --
,
QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO2/Si-STRUCTURES --
,
HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES --
,
A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY --
,
THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS --
,
MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE --
,
CLUSTER IONS IN LASER MASS SPECTRA OF WO3/C TARGETS --
,
ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF 4+CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING --
,
A MaV ION PROBE AT TU PRAGUE --
,
11. Fundamentals --
,
COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES --
,
MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION --
,
ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION --
,
TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY --
,
MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON --
,
INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING --
,
INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING --
,
NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE --
,
SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT --
,
PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON --
,
THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES --
,
MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON --
,
LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY --
,
THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT --
,
AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS --
,
12. Miscellaneous --
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LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM --
,
ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES --
,
SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON --
,
LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS --
,
LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS --
,
MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS --
,
STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS --
,
13. Author Index --
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Backmatter
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Issued also in print.
,
In English.
Additional Edition:
ISBN 9783112611197
Language:
English
DOI:
10.1515/9783112611203
URL:
https://doi.org/10.1515/9783112611203
URL:
https://www.degruyter.com/isbn/9783112611203
URL:
https://doi.org/10.1515/9783112611203
URL:
https://www.degruyter.com/isbn/9783112611203
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