UID:
edocfu_9960112854602883
Format:
1 online resource (432 p.)
Edition:
Reprint 2021
ISBN:
9783112497968
Series Statement:
Physica status solidi / A. ; Volume 89, Number 2
Note:
Frontmatter --
,
Classification Scheme --
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Contents --
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Original Papers --
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Structure --
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Mössbauer Study of the Reaction Kinetics of Hexagonal M-Phase Ferrites --
,
Dynamics of Solid Solution Formation in Cu-Ni Mixture under Plastic Flow at High Pressure --
,
Simulation of the Influence of Mechanical Stresses on the Kinetics of Crystallization of Ion-Implanted Silicon Layers under Pulse Heating --
,
Intermediate Smectic A-State at Nematic-Smectic C Phase Transition at Tilted Orientation --
,
Strain Field Observation and Lattice Stability at the Tip of Thermoelastic Cu-Zn-Al Martensite Plates --
,
Focus Dependence of the Black-White Contrast of Small Point Defect Clusters on Transmission Electron Microscope Images of Crystalline Specimens --
,
Etude de validité d'un modèle de réseau de précipités sphériques pour la description de la remise en solution des précipités 0 dans les alliages Al-Cu --
,
Departures from Stoichiometry of BiTeI Crystals Grown from the Vapour Phase --
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Lattice properties --
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Focusing of Nonlinear Ultrasonic Waves in Viscous Thermoelastie Materials with Spherical Inclusions --
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Optical Properties of the Two Crystal Modifications of the Organic Conductor (BEDT-TTF)2I3 --
,
Defects, atomistic aspects --
,
On the Dose Dependence of the Formation of Z1 Centres in KCl:Ca --
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Transmission Electron Microscopy Observations of Dislocations and Twins in Polycrystalline Zirconium --
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Effect of Chlorine Implantation on Phosphorus Predeposition in Silicon --
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The Size Distribution of Macroscopic Defects in Media Containing Gas Admixture --
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Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced y-Spectroscopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling Technique --
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Extended Defects in Deformed Rutile --
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Magnetism --
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Exchange and Dipolar Interactions in TbF3 --
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Magnetic After-Effects in Nitrogen-Charged α-Fe Following Low-Temperature Electron- and Neutron-Irradiation --
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A Quantitative Characterization of Magnetic Defects by Domain Nucleation --
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Magnetic Ordering in the System Ca(Cu1-x Mnx)3Mn4O12 --
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Localized electronic states and transitions --
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Thermally Stimulated Exoelectron Emission and Spectra of Thermoluminescence in NaCl:Ca, Cu and NaCl:Cu Single Crystals --
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Determination of the Electron Effective Mass and Relaxation Time in Heavily Doped Silicon --
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Shallow Energy States in CdTe --
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Analysis of Non-Exponential Filling in DLTS on p-n Junctions. Application to Dominant Traps in AlGaAs Lasers --
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Electric transport --
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Injection and Thermodepolarization Currents in GaS:Er Single Crystals --
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Ionic Conduction in Rhodamine-Doped Polyester Polymer --
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Minority Carrier Lifetimes in PbS0.1Se 0.9Determined from Diffusion Length by a Scanning Laser Microprobe --
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Conductivity Instabilities and Polarization Effects of Bi12 (Ge, Si)O20 Single-Crystal Samples --
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Photoconductivity of CdSxSe1-x with Controlled Deviation from Stoichiometry --
,
I - U Characteristics of Non-Crystalline As-Se-Cd Thin Films --
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The Enhancement of Exclusion Effect in Compensated Semiconductors under the Action of Impurity Illumination Generating Minority Current Carriers --
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Device-related phenomena --
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On the Role of the Back Contact in DLTS Experiments with Schottky Diodes --
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Influence of Humidity on Electrical Properties of a MOS Structure with an Ultrathin Dielectric Film --
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Irradiation of MOS Transistors and Resulting Transport Processes in SiO2 --
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Laser Annealing Effects on Electrochromic Properties of Amorphous Evaporated WO3 Films --
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Short Notes --
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Structure --
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Preparation of Pb(Te, Se) Films by Simultaneous Evaporation of PbTe and Se --
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XPS Studies of RuO2 Covered Titanium Oxides --
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F.C.C. Solid Solutions in Al-Ge and Al-Si Alloys under High Pressure --
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The Nature of the Intermediate Phase of PbZrO3 --
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Lattice properties --
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Comparison of the Elastic Behaviour of CuGe4P3 with that of CuGe2P3 --
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Defects, atomistic aspects --
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The Temperature Dependence of the Effective Threshold Energy for Atom Displacement in Tantalum --
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Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurements --
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Angular Distribution of Emitted X-Rays from an Ion-Implanted Layer --
,
Effect of Structure Transformation on the Transient Creep Characteristics of Zn-40 wt% A1 and Zn-0.5 wt% A1 Alloys --
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Moiré Techniques by Means of Scanning Electron Microscopy --
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Positron Annihilation at Defects in Surface Layers of Steel Irradiated by Supercurrent Ion Beams --
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Magnetism --
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Remanent Magnetization and Wall Coercivity of Continuous Films with Perpendicular Anisotropy --
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Extended electronic states and transitions --
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Optical Properties of Films of the PbTe-SnS System --
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Localized electronic states and transitions --
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ESR Studies on Doped Hydrogenated Amorphous Silicon-Carbon --
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Influence of Hot Annealing and Cooling Rate on the Hall Effect and Piezoresistance in Transmutationally Doped and Ordinary Silicon Crystals --
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Photo- and Electroluminescence of Neodymium in GaS --
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A Method of Determination of the Trap Depth of Deep Centres by Capacitance Measurements --
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Magnetic Hyperfine Interaction of 92mNb in ZrFe2 --
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Electric transport --
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Drift Mobility of Electrons in TlSbS2 --
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Photovoltaic Effect in LiNbO3:Mg --
,
Thermally Stimulated Depolarization of TINO2 near the Glass Transformation --
,
Measurements of the Rectifying Barrier Height of Sputter Deposited Bi2Te3 Contacts on p-Silicon --
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Device-related phenomena --
,
Energy Band Model of Ultrathin Solar Cells with Thickness up to 5 um --
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Variation of Switching Time of Silicon p-n-p-n Structures Irradiated by Fast Electrons --
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Influence of Electrode Material on the Electrical and Photoelectrical Properties of p-InP/AS2Se3 Heterostructures --
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Pre-Printed Titles
,
In English.
Additional Edition:
ISBN 9783112497951
Language:
English
DOI:
10.1515/9783112497968
URL:
https://doi.org/10.1515/9783112497968
URL:
https://www.degruyter.com/isbn/9783112497968
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