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  • 1
    Online Resource
    Online Resource
    New York, NY : Springer Science+Business Media, LLC
    UID:
    b3kat_BV036650406
    Format: 1 Online-Ressource , v.: digital
    Edition: Online_Ausgabe New York, NY Springer Science+Business Media, LLC 2008 Springer ebook collection / Chemistry and Materials Science 2005-2008 Sonstige Standardnummer des Gesamttitels: 041171-1
    ISBN: 9780387747439 , 9780387748016
    Additional Edition: Reproduktion von Physics and Properties of Narrow Gap Semiconductors 2008
    Language: English
    Subjects: Physics
    RVK:
    Keywords: Narrow-Gap-Halbleiter ; Physikalische Eigenschaft
    URL: Cover
    URL: Volltext  (lizenzpflichtig)
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  • 2
    Book
    Book
    New York [u.a.] :Plenum Press,
    UID:
    almahu_BV010873920
    Format: XIII, 349 S. : zahlr. graph. Darst.
    ISBN: 0-306-45052-6
    Series Statement: Microdevices
    Language: English
    Subjects: Physics
    RVK:
    RVK:
    Keywords: Halbleiter ; Mischkristall
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  • 3
    Book
    Book
    [Washington, DC] : Nat. Aeronautics and Space Administration, Scientific and Technical Information Branch
    UID:
    gbv_273532707
    Format: VII, 34 S , graph. Darst
    Language: Undetermined
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  • 4
    UID:
    b3kat_BV042411199
    Format: 1 Online-Ressource (364p)
    ISBN: 9781461303176 , 9781461379942
    Series Statement: Microdevices, Physics and Fabrication Technologies
    Note: In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets
    Language: English
    Keywords: Halbleiter ; Mischkristall
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  • 5
    Online Resource
    Online Resource
    New York, NY :Springer New York,
    UID:
    almahu_9947363650502882
    Format: XII, 606 p. , online resource.
    ISBN: 9780387748016
    Content: Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. For example, narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. In this book, the authors offer clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. Physics and Properties of Narrow Gap Semiconductors helps readers to understand semiconductor physics and related areas of materials science and how they relate to advanced opto-electronic devices.
    Note: Crystals -- Band Structures -- Optical Properties -- Transport Properties -- Lattice Vibrations.
    In: Springer eBooks
    Additional Edition: Printed edition: ISBN 9780387747439
    Language: English
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  • 6
    UID:
    almahu_9949199306302882
    Format: 364 p. , online resource.
    Edition: 1st ed. 1995.
    ISBN: 9781461303176
    Series Statement: Microdevices, Physics and Fabrication Technologies
    Content: In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
    Note: 1. Crystal Structures -- 1.1. Diamond, Zinc Blende, and Wurtzite Structures -- 1.2. Bulk Alloys -- 1.3. Alloy Structure Determined by EXAFS -- 1.4. Long-Range Ordered Semiconductor Alloys -- 1.5. Concluding Remarks -- References -- 2. Bonding in Ordered Structures -- 2.1. Cohesive Energy in the Born-Oppenheimer Adiabatic Approximation -- 2.2. Density Functional Theory -- 2.3. Bonds and Bands from Local Density Functional Theory -- 2.4. Tight-Binding Approach -- 2.5. The Bond-Orbital Model -- 2.6. Polarity and Ionicity -- 2.7. Excess Energies of Ordered Alloys -- 2.8. Concluding Remarks -- References -- 3. Elasticity -- 3.1. Definitions and Analysis -- 3.2. Ab Initio Calculations -- 3.3. Valence-Force-Field Model -- 3.4. "Exact" Tight-Binding Calculation -- 3.5. Analytical Expressions in the Bond-Orbital Model -- 3.6. Quantitative Tight-Binding Model -- 3.7. Elasticity in Alloys -- 3.8. Concluding Remarks -- References -- 4. Alloy Statistics and Phase Diagrams -- 4.1. Mixing Free Energy, Miscibility Gap, and Order-Disorder Transitions -- 4.2. Analytical Models -- 4.3. Phase Diagram: Common Tangent Line and Activity Coefficient -- 4.4. Vieland's Method and Binary Liquidus -- 4.5. Ternary Phase Diagrams -- 4.6. Phase Diagram Data and Simple Mixing Enthalpy Models -- 4.7. Generalized Quasi-Chemical Theory -- 4.8. Internal Strain and Cluster Energies -- 4.9. Sixteen-Bond Microclusters -- 4.10. Cluster Variational Method -- 4.11. Ab Initio Calculations -- 4.12. Concluding Remarks -- References -- Appendix 4A: Analytical Formulas of GQCA -- Appendix 4B: Critical Temperature in GQCA -- Appendix 4C: GQCA at Low Temperature -- 5. Band Structure Theory -- 5.1. Formation of Energy Bands -- 5.2. LCAO and the Empirical Tight-Binding Method -- 5.3. Plane-Wave Method and Empirical Pseudopotentials -- 5.4. Band Gaps and Effective Masses -- 5.5. Band Structure of Semiconductor Alloys: Problems and Applications -- 5.6. Green Function and Spectral Density of States -- 5.7. Perturbation Theory and Bowing of Fundamental Gaps -- 5.8. Multiple Scattering Theory and the Coherent Potential Approximation -- 5.9. A Single-Band Alloy Model -- 5.10. Molecular CPA for Zinc Blende Alloys -- 5.11. Effects of Diagonal and Off-Diagonal Disorder on Band-Edge Properties -- 5.12. Concluding Remarks -- References -- 6. Transport -- 6.1. Master and Boltzmann Equations -- 6.2. Electron-Phonon Interaction and Single-Particle Master Equation -- 6.3. Low-Field Transport for Nondegenerate Electrons in Collision-Time Approximations -- 6.4. Mobilities in Alloys: Example, SixGe1-x -- 6.5. Hot-Electron v-E Characteristics: Comparison of Materials' Merits -- 6.6. Scattering Mechanisms -- 6.7. Expansion Solution of the Boltzmann Equation -- 6.8. Near-Ballistic Transport -- 6.9. Intervalley Scattering -- 6.10. Narrow-Gap Materials -- 6.11. Concluding Remarks -- References -- 7. Band Structures of Selected Semiconductors and Their Alloys -- 7.1. Hybrid Pseudopotential and Tight-Binding Model (HPT) -- 7.2. Band Structures and Hamiltonian Parameters for III-V Constituent Compounds -- 7.3. The HPT Model Applied to III-V Pseudobinary Alloys -- 7.4. Band Structures of Selected III-V Zinc Blende Alloys -- 7.5. Band Structures and Hamiltonian Parameters for II-VI Zinc Blende Compounds -- 7.6. II-VI Zinc Blende Pseudobinary Alloys -- 7.7. Concluding Remarks -- References -- Appendix 7A: Band Structure Calculation Using HPT -- Appendix 7B: VCA Hamiltonian, Alloy Disorder and Molecular ATA Calculation -- 7B.1. The Alloy Hamiltonian in HPT -- 7B.2. The VCA Hamiltonian -- 7B.3. Disorder Hamiltonian and ATA Calculation -- 7B.4. Band Calculation Using the Molecular ATA -- Problems -- 1 -- 2 -- 3 -- 4 -- 5 -- 6.
    In: Springer Nature eBook
    Additional Edition: Printed edition: ISBN 9781461379942
    Additional Edition: Printed edition: ISBN 9780306450525
    Additional Edition: Printed edition: ISBN 9781461303183
    Language: English
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  • 7
    Book
    Book
    New York [u.a.] :Springer,
    UID:
    almahu_BV035857632
    Format: XIII, 506 S. : , Ill., graph. Darst.
    ISBN: 978-1-4419-1039-4
    Series Statement: Microdevices: physics and fabrication technologies
    Language: English
    Subjects: Physics
    RVK:
    RVK:
    Keywords: Narrow-Gap-Halbleiter ; Physikalische Eigenschaft
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