ISSN:
2214-7853
Content:
In this work, we experimentally investigate the effects of electric bias on the degradation of few-layer MoS2 back-gated field-effect transistors in ambient air. The devices were fabricated using mechanically exfoliated MoS2 flakes, which were transferred to a Si/SiO2 substrate by a PDMS-based transfer. We report an accelerated electric bias-induced degradation of the devices under investigation and used optical and scanning electron microscopy (SEM) to monitor changes of the morphology of the MoS2 channel. In particular, we found a linear dependency of the degradation on the electric field between the Ti/Au source and drain contacts. In addition, we identify four regions in which morphological changes occur, of which the edges of the MoS2 channel are most affected.
In:
Materials today. proceedings, Amsterdam [u.a.] : Elsevier, 2014, 53(2022), 2, Seite 281-284, 2214-7853
In:
volume:53
In:
year:2022
In:
number:2
In:
pages:281-284
Language:
English
DOI:
10.1016/j.matpr.2021.05.298
URL:
Volltext
(lizenzpflichtig)
Author information:
Pezoldt, Jörg
Author information:
Jacobs, Heiko O. 1970-
Author information:
Schwierz, Frank
Bookmarklink