Format:
6
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Illustrationen, Diagramme
ISSN:
1079-7114
Content:
Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moiré coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the 𝐊−𝐊 and 𝚪−𝐊 excitons accompanied by a transition from 𝐊−𝐊 to 𝚪−𝐊 emission. Both effects can be traced back to the underlying moiré pattern in the MoSe2 homobilayers, as confirmed by our low-energy continuum model for different moiré excitons. We identify two distinct intralayer moiré excitons for 𝑅 stacking, while 𝐻 stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moiré exciton species.
Note:
Gesehen am 05.08.2024
,
Published online: 11 January 2023
In:
Physical review letters, College Park, Md. : APS, 1958, 130(2023), 2, Artikel-ID 026901, Seite 1-6, 1079-7114
In:
volume:130
In:
year:2023
In:
number:2
In:
elocationid:026901
In:
pages:1-6
In:
extent:6
Language:
English
DOI:
10.1103/PhysRevLett.130.026901
Author information:
Steinhoff, Alexander
Author information:
Florian, Matthias
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