Format:
Online-Ressource (X, 351 p)
,
digital
Edition:
Springer eBook Collection. Chemistry and Materials Science
ISBN:
9789401003391
Series Statement:
NATO Science Series, Series II: Mathematics, Physics and Chemistry 58
Content:
A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena
Additional Edition:
ISBN 9781402005763
Additional Edition:
Erscheint auch als Druck-Ausgabe ISBN 9781402005763
Additional Edition:
Erscheint auch als Druck-Ausgabe ISBN 9781402005756
Additional Edition:
Erscheint auch als Druck-Ausgabe ISBN 9789401003407
Language:
English
DOI:
10.1007/978-94-010-0339-1
URL:
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