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  • 1
    Language: English
    In: The journal of physical chemistry. B, 18 November 2010, Vol.114(45), pp.14339-42
    Description: State-of-the-art methodologies for the conversion of solar thermal power to electricity are based on conventional electromagnetic induction techniques. If appropriate ZT = 4 thermoelectric materials were available, it is likely that conversion efficiencies of 30-40% could be achieved. The availability of all solid state electricity generation would be a long awaited development in part because of the elimination of moving parts. This paper presents a preliminary examination of the potential performance of ZT = 4 power generators in comparison with Stirling engines taking into account specific mass, volume and cost as well as system reliability. High-performance thermoelectrics appear to have distinct advantages over magnetic induction technologies.
    Keywords: Materials Scienceavailability ; Electricity ; Energy Conversion ; Induction ; Performance ; Reliability ; Stirling Engines ; Thermoelectric Materials;
    E-ISSN: 1520-5207
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  • 2
    In: Journal of Material Science & Engineering, 2016, Vol.05(03)
    ISSN: Journal of Material Science & Engineering
    E-ISSN: 21690022
    Source: CrossRef
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  • 3
    Language: English
    In: Advanced Functional Materials, 09 May 2012, Vol.22(9), pp.1827-1834
    Description: Innovative memory switch devices require reliable bistable conductance properties. It would be desirable if such bistable characteristics were available in robust solid state materials, such as diamond, which benefit from outstanding physical properties. A bistable current with reversible switching effect from surface transfer doped ultrananocrystalline diamond thin films measured by electron field emission is reported. This switching is manifested by the appearance of huge jumps in the current emission, up to four orders of magnitude, that occur at specific extracting electric field values. Persistent hysteresis is exhibited whenever the field is ramped down. It is proposed that these phenomena are the result of resonant‐tunneling through a double barrier junction composed of tetrahedral amorphous carbon (ta‐C)/nanodiamond/adsorbent/vacuum. This finding may pave the way for the realization of novel types of memory switch devices with unprecedented performance. from surface transfer doped ultra‐nanocrystalline diamond thin films is reported. This switching is manifested by abrupt jumps in the current emission at specific extracting electric field values. Persistent hysteresis is exhibited whenever the field is ramped down. This finding may lead the way to novel memory switch devices with unprecedented performance.
    Keywords: Composite Materials ; Ultrananocrystalline Diamond ; Electron Field‐Emission ; Electrical Hysteresis ; Transport Mechanisms
    ISSN: 1616-301X
    E-ISSN: 1616-3028
    Source: John Wiley & Sons, Inc.
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  • 4
    In: Research & Reviews: Journal of Material Sciences, 2018, Vol.06
    ISSN: Research & Reviews: Journal of Material Sciences
    E-ISSN: 23216212
    Source: CrossRef
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  • 5
    Language: English
    In: Applied Physics Letters, 01 March 2010, Vol.96(9)
    Description: We have characterized ultrananocrystalline diamond films with different surface terminations by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The surface terminations were performed by plasma functionalization in atmospheres of hydrogen, fluorine, and oxygen. XPS proves the dense monolayer coverage of the surface functionalization. AFM and STM show low impact of the plasma treatment on the surface morphology. STS has been used to investigate the surface electronic properties, for H-terminated surfaces the electronic structure is dominated by the s p 3 carbon phase of the grain surfaces; for O- and F-terminated surfaces, however, s p 2 carbon from the grain boundaries seems to determine the surface band gap.
    Keywords: Electronic Transport And Semiconductors
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2010 American Institute of Physics (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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  • 6
    Language: English
    In: Applied Physics Letters, 03/2010, Vol.96(9), p.092109
    Description: We have characterized ultrananocrystalline diamond films with different surface terminations by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The surface terminations were performed by plasma functionalization in atmospheres of hydrogen, fluorine, and oxygen. XPS proves the dense monolayer coverage of the surface functionalization. AFM and STM show low impact of the plasma treatment on the surface morphology. STS has been used to investigate the surface electronic properties, for H-terminated surfaces the electronic structure is dominated by the sp³ carbon phase of the grain surfaces; for O- and F-terminated surfaces, however, sp² carbon from the grain boundaries seems to determine the surface band gap. Journal Article.
    Keywords: Hydrogenatomic Force Microscopy ; Carbon ; Diamonds ; Electronic Structure ; Fluorine ; Grain Boundaries ; Hydrogen ; Morphology ; Oxygen ; Plasma ; Scanning Tunneling Microscopy ; Spectroscopy ; Tunneling ; X-Ray Photoelectron Spectroscopy;
    ISSN: 0003-6951
    E-ISSN: 1077-3118
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  • 7
    Language: English
    In: Langmuir : the ACS journal of surfaces and colloids, 19 October 2010, Vol.26(20), pp.15895-900
    Description: A lithographic method to generate reactive thiol groups on functionalized synthetic diamond for biosensor and molecular electronic applications is developed. We demonstrate that ultrananocrystalline diamond (UNCD) thin films covalently functionalized with surface-generated thiol groups allow controlled thiol-disulfide exchange surface hybridization processes. The generation of the thiol functional head groups was obtained by irradiating phenylsulfonic acid (PSA) monolayers on UNCD surfaces. The conversion of the functional headgroup of the self-assembled monolayer was verified by using X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and fluorescence microscopy. Our findings indicate the selective generation of reactive thiol surface groups. Furthermore, we demonstrate the grafting of yeast cytochrome c to the thiol-modified diamond surface and the electron transfer between protein and electrode.
    Keywords: Basic Biological Sciences General And Miscellaneous//Mathematics, Computing, And Information Scienceabsorption ; Cytochromes ; Diamonds ; Electron Transfer ; Fine Structure ; Fluorescence ; Functionals ; Hybridization ; Microscopy ; Proteins ; Thin Films ; Thiols ; X-Ray Photoelectron Spectroscopy ; Yeasts;
    ISSN: 07437463
    E-ISSN: 1520-5827
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  • 8
    Language: English
    In: Journal of the American Chemical Society, 27 December 2006, Vol.128(51), pp.16884-91
    Description: We have investigated the formation of self-assembled monolayers (SAMs) of 4'-nitro-1,1-biphenyl-4-diazonium tetrafluoroborate (NBD) onto ultrananocrystalline diamond (UNCD) thin films. In contrast to the common approach to modify diamond and diamond-like substrates by electrografting, the SAM was formed from the saturated solution of NBD in acetonitrile by pure chemical grafting. Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), and near edge X-ray absorption fine structure spectroscopy (NEXAFS) have been used to verify the direct covalent attachment of the 4'-nitro-1,1-biphenyl (NB) SAM on the diamond substrate via stable C-C bonds and to estimate the monolayer packing density. The results confirm the presence of a very stable, homogeneous and dense monolayer. Additionally, the terminal nitro group of the NB SAM can be readily converted into an amino group by X-ray irradiation as well as electrochemistry. This opens the possibility of in situ electrochemical modification as well as the creation of chemical patterns (chemical lithography) in the SAM on UNCD substrates and enables a variety of consecutive chemical functionalization for sensing and molecular electronics applications.
    Keywords: Chemistry;
    ISSN: 0002-7863
    E-ISSN: 15205126
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  • 9
    Language: English
    In: Applied Physics Letters, 04/07/2008, Vol.92(14), p.143118
    Description: Reaction of disperse ultrananocrystalline diamond (UNCD) and mixtures of UNCD containing 10%-20% nanoboron carbide (B₄C) with methane gas at temperatures near 1200 K results in mechanically rigid compacts called nanocarbon ensembles (NCE) and boron-doped NCE, respectively. Seebeck coefficient and electrical conductivity results lead to strongly temperature dependent power factors that increase 30-40 fold for boron containing ensembles compared to undoped material. It is likely that boron substitutional doping of nanographite crystallites results in a multiplicity of electronic states within a narrow energy band around the Fermi level leading to an increase in configurational electronic entropy. Journal Article.
    Keywords: Natural Gas Materials Scienceboron ; Carbides ; Diamonds ; Electric Conductivity ; Entropy ; Fermi Level ; Methane ; Mixtures ; Multiplicity ; Power Factor ; Thermoelectric Properties;
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: CrossRef
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  • 10
    Language: English
    In: Applied Physics Letters, 07 April 2008, Vol.92(14)
    Description: Reaction of disperse ultrananocrystalline diamond (UNCD) and mixtures of UNCD containing 10%–20% nanoboron carbide ( B 4 C ) with methane gas at temperatures near 1200 K results in mechanically rigid compacts called nanocarbon ensembles (NCE) and boron-doped NCE, respectively. Seebeck coefficient and electrical conductivity results lead to strongly temperature dependent power factors that increase 30–40 fold for boron containing ensembles compared to undoped material. It is likely that boron substitutional doping of nanographite crystallites results in a multiplicity of electronic states within a narrow energy band around the Fermi level leading to an increase in configurational electronic entropy.
    Keywords: Nanoscale Science And Design
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2008 American Institute of Physics (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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