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  • 1
    Language: English
    In: Journal of Alloys and Compounds, March 15, 2013, Vol.553, p.208(4)
    Description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jallcom.2012.11.134 Byline: Chung-Cheng Huang (a), Yow-Jon Lin (a), Cheng-Yu Chuang (b), Chia-Jyi Liu (b), Yao-Wei Yang (a) Keywords: Electronic structures; Semiconductors; Chemical synthesis; SnS Abstract: a* The effect of S content on the electrical property of the SnS.sub.x film was examined. a* For S-rich films, the probability of having formed Sn vacancies (V.sub.Sn) should be high. a* Transformation from V.sub.Sn to V.sub.Sn.sup.2- is accompanied by lattice relaxation. a* Transformation from Sn.sup.2+ to Sn.sup.4+ is an offset to lattice relaxation. a* A link between the conduction type and defects was established. Author Affiliation: (a) Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (b) Department of Physics, National Changhua University of Education, Changhua 500, Taiwan Article History: Received 20 October 2012; Accepted 21 November 2012
    Keywords: Semiconductors (Materials) -- Methods ; Sulfur Compounds -- Methods
    ISSN: 0925-8388
    Source: Cengage Learning, Inc.
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  • 2
    Language: English
    In: Thin Solid Films, Jan 1, 2014, Vol.550, p.525(5)
    Description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.10.134 Byline: Cheng-He Ruan, Chung-Cheng Huang, Yow-Jon Lin, Guan-Ru He, Hsing-Cheng Chang, Ya-Hui Chen Abstract: p-Type conduction in Cu.sub.2ZnSnS.sub.4 (CZTS) thin films was realized by the sol-gel method. Measurements of electrical properties with the changes in the Cu/Zn ratio were carried out to determine defect behaviors. Combining with Hall, Raman, scanning electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction results, a direct link between the Cu.sub.Zn antisite, conduction type and hole concentration of CZTS films was established. Types of conduction and carrier density in CZTS films were found to be dependent on the Cu/Zn ratio. The formation of p-type conductivity in CZTS films might be due to the increased Cu.sub.Zn density. Article History: Received 18 January 2013; Revised 1 October 2013; Accepted 22 October 2013
    ISSN: 0040-6090
    Source: Cengage Learning, Inc.
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  • 3
    Language: English
    In: Applied Physics Letters, 30 September 2013, Vol.103(14)
    Description: Programmable metallization cell (PMC) memory devices with oxidized Cu-Ti alloy films as the bottom electrodes have been shown to exhibit a superior on/off state current ratio (memory window) of as high as 10 3 and endurance of 3000 cycles as compared to conventional pure copper and unoxidized Cu-Ti alloy electrodes. It was conjectured that the Cu-Ti alloy electrodes could obtain the appropriate amount of copper atoms to format and rupture the conductive filaments in the resistive switching layer. Furthermore, the oxidized Cu-Ti alloys could control the Cu cations from the Cu and Cu 2 O to the appropriate amountto achieve the most favorable PMC characteristics.
    Keywords: Dielectrics, Ferroelectrics, And Multiferroics
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2013 AIP Publishing LLC (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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  • 4
    Language: English
    In: Annals of Thoracic Surgery, 2014, Vol.97(3), p.873(6)
    Description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.athoracsur.2013.10.029 Byline: Sheung-Fat Ko, Chung-Cheng Huang, Jui-Wei Lin, Hung-I Lu, Chia-Te Kung, Shu-Hang Ng, Yung-Liang Wan, Hon-Kan Yip Abstract: Idiopathic azygos vein aneurysm (AVA) is rare. This retrospective study evaluated the imaging features and outcomes in 10 cases of idiopathic AVA. Author Affiliation: (a) Department of Radiology, Kaohsiung Chang Gung Memorial Hospital and Chang Gung University College of Medicine, Kaohsiung, Taiwan (b) Department of Pathology, Kaohsiung Chang Gung Memorial Hospital and Chang Gung University College of Medicine, Kaohsiung, Taiwan (c) Department of Thoracic and Cardiovascular Surgery, Kaohsiung Chang Gung Memorial Hospital and Chang Gung University College of Medicine, Kaohsiung, Taiwan (d) Department of Emergency Medicine, Kaohsiung Chang Gung Memorial Hospital and Chang Gung University College of Medicine, Kaohsiung, Taiwan (e) Department of Cardiology, Kaohsiung Chang Gung Memorial Hospital and Chang Gung University College of Medicine, Kaohsiung, Taiwan Article History: Accepted 11 October 2013
    Keywords: Emergency Medicine ; Aneurysm
    ISSN: 0003-4975
    Source: Cengage Learning, Inc.
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  • 5
    Language: English
    In: Microelectronic Engineering, Oct, 2013, Vol.110, p.21(4)
    Description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.mee.2013.04.030 Byline: Chung-Cheng Huang, Yow-Jon Lin, Chia-Jyi Liu, Yao-Wei Yang Abstract: Article History: Received 17 October 2012; Revised 9 February 2013; Accepted 19 April 2013
    Keywords: Solar Energy Industry -- Analysis ; Sulfides -- Analysis
    ISSN: 0167-9317
    Source: Cengage Learning, Inc.
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  • 6
    Language: English
    In: Thin Solid Films, 01 January 2014, Vol.550, pp.525-529
    Description: p-Type conduction in Cu ZnSnS (CZTS) thin films was realized by the sol–gel method. Measurements of electrical properties with the changes in the Cu/Zn ratio were carried out to determine defect behaviors. Combining with Hall, Raman, scanning electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction results, a direct link between the Cu antisite, conduction type and hole concentration of CZTS films was established. Types of conduction and carrier density in CZTS films were found to be dependent on the Cu/Zn ratio. The formation of p-type conductivity in CZTS films might be due to the increased Cu density.
    Keywords: Thin Films ; Electrical Property ; Semiconductors ; Defect ; Engineering ; Physics
    ISSN: 0040-6090
    E-ISSN: 1879-2731
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  • 7
    Language: English
    In: Journal of Alloys and Compounds, 15 March 2013, Vol.553, pp.208-211
    Description: ► The effect of S content on the electrical property of the SnS film was examined. ► For S-rich films, the probability of having formed Sn vacancies (V ) should be high. ► Transformation from V to is accompanied by lattice relaxation. ► Transformation from Sn to Sn is an offset to lattice relaxation. ► A link between the conduction type and defects was established. The effect of S content on the electrical property of the sol–gel SnS films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn and Sn . The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn /(Sn + Sn ) in the S-rich film. The probability of having formed Sn vacancies (V ) should be high under S-rich growth conditions. Transformation from V to is accompanied by lattice relaxation. Therefore, transformation from Sn to Sn is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnS .
    Keywords: Electronic Structures ; Semiconductors ; Chemical Synthesis ; Sns ; Engineering ; Chemistry ; Physics
    ISSN: 0925-8388
    E-ISSN: 1873-4669
    Source: ScienceDirect Journals (Elsevier)
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  • 8
    Language: English
    In: Rheumatology International, 2011, Vol.31(7), pp.871-877
    Description: This study investigated the effects of shockwave on systemic concentrations of nitric oxide (NO) level, angiogenic and osteogenic and anti-inflammatory factors in hips with osteonecrosis of the femoral head (ONFH). Thirty-five patients (47 hips) with ONFH were enrolled in this study. Each hip was treated with 6,000 impulses of shockwave at 28 kV in a single session. Ten milliliters of peripheral blood was obtained for the measurements of serum NO level, angiogenic factors (VEGF, vWF, FGF basic and TGF-β1); osteogenic factors (BMP-2, osteocalcin, alkaline phosphatase, DKK-1 and IGF); and anti-inflammation markers (sICAM and sVCAM) before treatment and at 1, 3, 6 and 12 months after treatment. The hips were evaluated with clinical assessment, serial radiograph and MRI. At 12 months, the overall results showed 83% improved and 17% un-improved. Total hip was performed in 4 cases (8.5%). Serum NO3 level showed significant elevation at 1 month after treatment, but the changes at 3, 6 and 12 months were not significant. For angiogenesis, significant elevations of VEGF, vWF and FGF basic and a decrease in TGF-β1 were observed at 1 month, but the changes at 3, 6 and 12 months were non-significant. For osteogenesis, BMP-2, osteocalcin, alkaline phosphatase and IGF were significantly elevated, while DKK-1 was decreased at 1 month, but the changes at 3, 6 and 12 months were not significant. For anti-inflammation markers, significant decreases in sICAM and sVCAM were noted at 1 month after treatment, but the changes at 3, 6 and 12 months were non-significant. Local ESWT application results in significant elevations of serum NO level, angiogenic and osteogenic and anti-inflammatory factors in ONFH.
    Keywords: Shockwave ; Osteonecrosis ; Nitric oxide (NO) ; Angiogenesis and osteogenesis ; Anti-inflammation
    ISSN: 0172-8172
    E-ISSN: 1437-160X
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  • 9
    Language: English
    In: The Annals of Thoracic Surgery, March 2014, Vol.97(3), pp.873-878
    Description: Idiopathic azygos vein aneurysm (AVA) is rare. This retrospective study evaluated the imaging features and outcomes in 10 cases of idiopathic AVA. We retrospectively evaluated 10 patients with surgically proven or typical imaging features of idiopathic AVA encountered in our institution between 1990 and 2012. Chest roentgenography and computed tomography (CT) were performed in all 10 patients, and magnetic resonance imaging (MRI) was performed in 4 of these patients. The clinical features, AVA morphologic characteristics, and outcomes were analyzed. Chest roentgenograms showed a right paratracheal nodule or mediastinal mass in 7 cases. CT and MRI disclosed 4 thrombosed saccular AVAs (short axis, 3–6 cm; mean, 4.7 cm) and 6 fusiform AVAs (short axis, 2.2–3 cm; mean 2.7 cm). Two large saccular AVAs that presented with chest tightness were resected shortly after diagnosis. One saccular AVA manifested as a pulmonary embolism, whereas the remaining AVA was asymptomatic; they showed 25% to 40% short-axis growth in a 3- to 5-year interval before subsequent AVA resection. Conversely, all 6 fusiform AVAs were asymptomatic and found incidentally, remaining rather stable with less than 8% short-axis growth during 3 to 8 years of follow-up. Compared with fusiform AVAs, saccular AVAs were larger and had a greater frequency of AVA-related symptoms, intralesional thromboses, and greater than 20% short-axis growth during the follow-up period. Saccular AVAs are larger than fusiform aneurysms, presenting with greater frequency of chest symptoms, intralesional thrombosis, considerable lesion growth, and need for surgical intervention. In contrast, fusiform AVAs are asymptomatic and rather stable in long-term follow-up.
    Keywords: 33;
    ISSN: 0003-4975
    E-ISSN: 1552-6259
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  • 10
    Language: English
    In: Int. J. of Nanotechnology, 2014, Vol 11 Issue 1/2/3/4, pp 156 - 166
    Description: Resistive random access memory (RRAM) cells with Cu-doped TiOSUB align="right"SMALL2/SMALL/SUB film between two Pt inert electrodes are produced in this work, and these achieve a lower required programming voltage of −0.7 V and higher endurance of about 1000 cycles at the programming/erasing voltage of −5 V/+3 V for the pulse width of 1 μs, compared with the conventional Pt/TiOSUB align="right"SMALL2/SMALL/SUB/Cu ones. It is conjectured that the distribution of Cu sources in the Cu-doped TiOSUB align="right"SMALL2/SMALL/SUB (TiOSUB align="right"SMALL2/SMALL/SUB : Cu) resistive switching film facilitates the formation of sharp and narrow conductive filaments, attributed to the Cu sources near the negative biased Pt electrode were oxidised more easily to become the Cu cations than those in other regions. The proposed Pt/TiOSUB align="right"SMALL2/SMALL/SUB : Cu/Pt sample can thus achieve a lower DC programming voltage than the conventional one. Moreover, it is conjectured that the better endurance of the Pt/TiOSUB align="right"SMALL2/SMALL/SUB : Cu/Pt sample is due to the lower amount of residual Cu atoms in the TiOSUB align="right"SMALL2/SMALL/SUB layer from the ruptured filaments during the erasing process. This is because the increase in the amount of Cu atoms is limited by the inert Pt electrode when there are uniformly distributed Cu sources and there is no Cu electrode.
    Keywords: RRAM; resistive RAM; random access memory; CBRAM; conductive-bridging RAM; PMC; programmable metallisation cell; metal oxide; dielectric; nanoelectronics; nanotechnology; bipolar resistive switching; copper doping; titanium dioxide; titania.
    ISSN: 1475-7435
    ISSN: 14757435
    ISSN: 1741-8151
    ISSN: 17418151
    E-ISSN: 1741-8151
    Source: Inderscience Journals
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