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  • 1
    UID:
    (DE-627)1789673445
    ISBN: 9783030627423
    In: International Conference on Machine Learning and Big Data Analytics for IoT Security and Privacy (2020 : Online), The 2020 International Conference on Machine Learning and Big Data Analytics for IoT Security and Privacy ; Volume 1, Cham : Springer, 2021, (2021), Seite 799-804, 9783030627423
    In: year:2021
    In: pages:799-804
    Language: English
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  • 2
    Book
    Book
    Congqing, China : Congqing Publ. House
    UID:
    (DE-603)321550854
    Format: 348 S. , zahlr. Ill., graph. Darst.
    ISBN: 7536629990
    Series Statement: Contributions of the Biological Control Research Institute, Fujian Agricultural College. Special publication 5
    Note: In chin. Schrift, engl. Zus. S. 1-15
    Language: Chinese , English
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  • 3
    UID:
    (DE-101)1309369615
    Format: Online-Ressource
    ISSN: 1522-2683
    Content: Abstract: Mixed DNA samples from at least two contributors can be present at a crime scene, which could be the most crucial piece of genetic evidence. The mixed stains in sexual assault cases are typically separated using differential lysis procedures (a two‐step method). Blood mixed stains, however, are usually difficult to separate. In this work, we propose that a mixed stain comprises three layers, that is, (1) the upper layer which is primarily made up of cells from one contributor; (2) the middle layer which is a similar mixture from two contributors; and (3) the lower layer which primarily comprises cells from the other contributor. Based on this concept, a novel three‐step DNA extraction method was proposed to solve the challenge involving bloodstains from two contributors. In the experiment, we extracted three layers DNA from mixed bloodstains using three steps. As a result, single‐source DNA and approximate single‐source DNA were detected from steps 1 and 3, respectively. This study demonstrates that the DNA from some mixed blood stains could be effectively separated following an appropriate extraction strategy, providing valuable insights, and serving as a reference for future examination of blood mixtures.
    In: day:09
    In: month:11
    In: year:2023
    In: extent:6
    In: Electrophoresis, Weinheim : Wiley-Blackwell, 1980-, (09.11.2023) (gesamt 6), 1522-2683
    Language: English
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  • 4
    Book
    Book
    Bei jing : Zhong guo zhan wang chu ban she
    UID:
    (DE-627)1401678033
    Format: 3, 7, 315 S.
    Edition: Di 1 ban, di 1 ci yin shua
    Original writing title: 经济战略比较研究
    Original writing publisher: 北京 : 中国展望出版社
    Language: Chinese
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  • 5
    Book
    Book
    shang hai : shang hai shu hua chu ban she
    UID:
    (DE-627)1401846556
    Original writing title: 历代书法论文选
    Original writing publisher: 上海 : 上海书画出版社
    Language: Chinese
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  • 6
    UID:
    (DE-627)1727730569
    ISSN: 2516-1814
    In: Journal of supply chain management, logistics and procurement, London : Henry Stewart Publications, 2018, 2(2020), 4, Seite 294-306, 2516-1814
    In: volume:2
    In: year:2020
    In: number:4
    In: pages:294-306
    Language: English
    Keywords: Aufsatz in Zeitschrift
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  • 7
    Online Resource
    Online Resource
    [Erscheinungsort nicht ermittelbar] : eScholarship, University of California
    UID:
    (DE-627)1803146826
    Content: Nonvolatile memory devices and random laser devices based on ZnO thin film and nanostructures are studied and discussed in this dissertation. The p-n-p nonvolatile memory was achieved by using Sb-ZnO/ZnO/Sb-ZnO structure in Chapter 2. Secondary ion mass spectrometry result confirmed the formation of the structure. Rectifying current-voltage characteristics between Sb-ZnO and undoped ZnO layers were achieved, proving the p-n junction was formed. The p-type behavior from the p-n-p structure was studied by using the capacitance-voltage measurement and small signal model. The voltage operation led to the charging/discharging of the structure, showing nonvolatile memory effect. Low writing voltage and long retention time were achieved. The n-p-n nonvolatile memory based on Na-doped ZnO nanostructures was also studied in Chapter 3. To achieve n-p-n nonvolatile memory, the Na-doped nanorods were grown on a ZnO seed layer on Si. The p-type conductivity of the Na-doped nanorods was studied by temperature-dependent photoluminescence and nanorod back-gated field effect transistor. Vertically aligned undoped ZnO nanotips, nanotubes and nanorods were synthesized on the top facets of Na-doped ZnO nanorods without catalytic assistance under different growth time in a chemical vapor deposition system. The undoped nanorods, Na-doped nanorods and undoped seed layer form an n-p-n memory structure. The programming and retention characteristics have been demonstrated. Furthermore, the bipolar resistive switching memory using Na-doped ZnO nanowire was also demonstrated in Chapter 4. The mechanism of the self-complianced and self-rectifying effect of the device was studied. The ZnO based optoelectronics devices are studied in Chapter 5 and 6. An electrically pumped ZnO homojunction random laser diode based on nitrogen doped p-type ZnO nanowires was achieved. The p-type behaviors were studied by output characteristic and transfer characteristic of the nanowire back-gated field effect transistor, as well as low-temperature photoluminescence. The formation of the p-n junction is confirmed by the current-voltage characteristic and electron-beam-induced current. The random lasing behaviors were demonstrated by using both optical pumping and electrical pumping, with a threshold of 300 kW/cm2 and 40 mA, respectively. The angle dependant electroluminescence of the device further proved the random lasing mechanism. To enhance the output power and reduce the threshold current of the random laser, a 10-period SiO2/SiNx distributed Bragg reflector (DBR) was introduced into the device. The formation of the homojunction p-n junction was confirmed by the current-voltage and photocurrent characteristics. The random lasing behaviors were demonstrated by electrical pumping with a low threshold of around 3 mA. The output power was measured to be 220 nW at 16 mA drive current.
    Note: Dissertation eScholarship, University of California 2013
    Language: English
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  • 8
    Book
    Book
    Garbsen : PZH, Produktionstechn. Zentrum
    UID:
    (DE-101)972874232
    Format: XII, 137 S. , graph. Darst. , 21 cm, 214 gr.
    ISBN: 9783936888539 , 3936888531
    Series Statement: Berichte aus dem IW Bd. 2004,02
    Note: Zugl.: Hannover, Univ., Diss., 2004
    Language: German
    Keywords: Hochschulschrift
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  • 9
    UID:
    (DE-603)128101326
    Format: Online-Ressource
    Note: Hannover, Univ., Diss., 2004
    Language: German
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  • 10
    Book
    Book
    Garbsen : PZH Produktionstechnisches Zentrum
    UID:
    (DE-627)118634086X
    Format: XII, 137 S. , graph. Darst.
    ISBN: 3936888531
    Series Statement: Berichte aus dem IW / Institut für Werkstoffkunde 2004,2
    Note: Zugl.: Hannover, Univ., Diss., 2004
    Language: German
    Keywords: Hochschulschrift
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