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  • 1
    UID:
    b3kat_BV043411900
    Format: VIII, 220 Seiten , Illustrationen, Diagramme (farbig)
    ISBN: 9781501501548 , 9781501510502
    Note: Literaturangaben
    Additional Edition: Erscheint auch als Online-Ausgabe, EPUB ISBN 978-1-5015-0155-5
    Additional Edition: Erscheint auch als Online-Ausgabe, PDF ISBN 978-1-5015-0153-1
    Language: English
    Subjects: Engineering , Chemistry/Pharmacy
    RVK:
    RVK:
    Keywords: Nanotechnologie
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  • 2
    UID:
    kobvindex_GFZ76735
    Format: VI, 293 S. : Ill., graph. Darst.
    ISBN: 096658693X
    Series Statement: Publication of the International Lithosphere Programme 344
    Note: MAB0014.001: M 04.0108 , MAB0014.002: M 06.0107
    In: Publication of the International Lithosphere Programme
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  • 3
    UID:
    b3kat_BV045228081
    Format: xvi, 304 Seiten , Illustrationen, Diagramme , 24 cm
    ISBN: 9781482255881 , 9781138893078
    Series Statement: Devices, circuits and systems
    Note: Includes bibliographical references and index
    Additional Edition: Erscheint auch als Online-Ausgabe, PDF ISBN 9781482255898
    Language: English
    Subjects: Engineering
    RVK:
    Keywords: Elektrostatische Entladung ; Integrierte Schaltung ; Schutzschaltung
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  • 4
    UID:
    b3kat_BV045185801
    Format: 1 Online-Ressource (XIV, 349 p)
    ISBN: 9781461554158
    Content: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9781461374732
    Language: English
    URL: Volltext  (URL des Erstveröffentlichers)
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  • 5
    Online Resource
    Online Resource
    Boston, MA : Springer US
    UID:
    b3kat_BV042412559
    Format: 1 Online-Ressource (XII, 336 p)
    ISBN: 9781489919045 , 9781489919069
    Series Statement: Microdevices, Physics and Fabrication Technologies
    Note: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em­ ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light­ emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications
    Language: English
    Keywords: Halbleiterbauelement ; pn-Übergang ; Numerisches Verfahren
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