Format:
Online-Ressource (501 p)
Edition:
Online-Ausg.
ISBN:
9780080230498
Content:
The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field
Note:
Description based upon print version of record
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Front Cover; The Physics of SiO2 and its Interfaces; Copyright Page; FOREWORD; Table of Contents; CHAPTER I: TRANSPORT PROPERTIES AND TUNNELING; CHAPTER1. ELECTRONIC PROPERTIES OF VITREOUS SILICON DIOXIDE; ABSTRACT; 1. MOBILITY EDGES AND POLARONS; 2. DEEP STATES IN THE GAP; 3. EXCITONS; REFERENCES; CHAPTER 2. SMALL POLARON FORMATIONAND MOTION OF HOLES IN a-SiO2; ABSTRACT; REFERENCES; CHAPTER 3.FIELD-DEPENDENT HOLE TRANSPORT IN AMORPHOUS SiO2; ABSTRACT; INTRODUCTION; SAMPLES AND EXPERIMENTAL TECHNIQUES; RESULTS; DISCUSSION; REFERENCES; CHAPTER 4. EXCITON TRANSPORT IN SiO2; ABSTRACT
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INTRODUCTIONEXPERIMENTAL RESULTS; DISCUSSION; ACKNOWLEDGMENT; REFERENCES; CHAPTER 5. HIGH-ELECTRIC FIELD TRANSPORT OF ELECTRONS IN SiO2; ABSTRACT; INTRODUCTION; VELOCITY-FIELD RELATIONSHIP; VELOCITY RUNAWAY; AVALANCHE BREAKDOWN; DISCUSSION; REFERENCES; CHAPTER 6.ELECTRON EMISSION FROM SILICON DIOXIDE INTO VACUUM; ABSTRACT; INTRODUCTION; SAMPLE PREPARATION; MEASUREMENT TECHNIQUE; RESULTS; DISCUSSION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; CHAPTER 7.ELECTRON TRANSPORT IN SILICON OXYNITRIDE; References; CHAPTER 8.THE NATURE OF ELECTRON TUNNELING IN Si02; ACKNOWLEDGMENT; REFERENCES
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CHAPTER 9.EVIDENCE FOR A BAND TAIL ON THE CONDUCTION BAND EDGE OF THERMAL Si02 FROM PHOTON ASSISTED TUNNELING MEASUREMENTSABSTRACT; REFERENCES; CHAPTER II: ELECTRONIC STRUCTURE AND SPECTRA; CHAPTER 10.ELECTRONIC STRUCTURES OF CRYSTALLINE AND AMORPHOUS SiO2; REFERENCES; CHAPTER 11. ELECTRONIC STRUCTURE OF α-QUARTZ AND THE INFLUENCE OF SOMELOCAL DISORDER: A TIGHT BINDING STUDY; ABSTRACT; REFERENCES; CHAPTER 12. ELECTRONIC STRUCTURE INVESTIGATIONS OF TWO ALLOTROPIC FORMS OF SiO2: α-QUARTZ AND β-CRISTOBALITE; ABSTRACT; INTRODUCTION; Band Structure; Total and Orbital Densities of States
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REFERENCESCHAPTER 13.BAND STRUCTURES AND ELECTRONIC PROPERTIES OF SiO2; ABSTRACT; INTRODUCTION; TIGHT-BINDING FIT TO CONDUCTION BANDS; TIGHT-BINDING BANDS OF IDEALIZED TRIDYMITE; SUMMARY AND CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; CHAPTER 14.K X-RAY SPECTRA OF AMORPHOUS AND CRYSTALLINE SiO2; INTRODUCTION; RESULTS; DISCUSSION; REFERENCES; CHAPTER15. THE OPTICAL ABSORPTION SPECTRUM OF Si02; ABSTRACT; INTRODUCTION; BAND-THEORETIC APPROACH AND THE EFFECT OF E-H INTERACTIONS; BOND-ORBITAL APPROACH; REFERENCES; CHAPTER16. INELASTIC ELECTRON SCATTERING IN SiO2; ABSTRACT; REFERENCES
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CHAPTER 17.ELECTRONIC STRUCTURE OF SiO2ABSTRACT; INTRODUCTION; EXPERIMENTAL TECHNIQUE; RESULTS AND DISCUSSION; REFERENCES; CHAPTER 18. THE ABSORPTION AND PHOTOCONDUCTIVITY SPECTRA OF VITREOUS SiO2; INTRODUCTION; RESULTS; INTERPRETATION; REFERENCES; CHAPTER 19.CALCULATED AND MEASURED AUGER LINESHAPES IN SiO2; ABSTRACT; INTRODUCTION; CALCULATION OF THE AUGER TRANSITIONS; EXPERIMENTAL MEASUREMENTS; RESULTS AND DISCUSSION; REFERENCES; CHAPTER 20. IS SILICON DIOXIDE COVALENT OR IONIC?; ABSTRACT; INTRODUCTION; THE ELECTRONIC STRUCTURE; THE CONSEQUENCES; REFERENCES
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CHAPTER 21. CHEMICAL BOND AND RELATED PROPERTIES OFSiO2
Additional Edition:
9781483139005
Additional Edition:
Print version The Physics of SiO2 and Its Interfaces : Proceedings of the International Topical Conference on the Physics of SiO2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22-24, 1978
Language:
English
Keywords:
Electronic books
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