Thin Solid Films, 31 August 2012, Vol.520(21), pp.6626-6630
The optical and photoluminescence (PL) properties of nanocrystalline 3C-SiC films and the effect of the boundary regions between the nanocrystals were studied for two sets of films: (a) films with 10–15 nm nanocrystal size obtained by direct ion deposition method and (b) similar films annealed in oxygen at 850–950 °C. It was shown that annealing of the nanocrystalline SiC films resulted in weaker absorption in a broad spectral range, and to the increase of the optical band gap from 1.8 to 2.2 eV. On the contrary, the edge PL bands in the UV range (2.2 to 2.4 eV) remained similar. In the IR range, three maxima absent in the as-grown films, appeared at 1.52 eV, 1.56 eV and 1.63 eV. Measurement of the intensity of PL maxima as a function of the excitation power showed a nonlinear dependence that was attributed to the onset of stimulated emission. ► We prepared the as-grown and annealed nanocrystalline (nc) SiC films. ► We studied the optical and photoluminescence (PL) properties of the nc-SiC films. ► The boundary regions between the nanocrystals affect the properties of films. ► Three PL maxima absent in the as-grown films appeared in the annealed films. ► The intensity of the PL maxima has a nonlinear dependence on excitation power.
Silicon Carbide Nanocrystalline Films ; High-Temperature Annealing ; Optical Properties ; Photoluminescence Properties ; Stimulated Emission ; Engineering ; Physics
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