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  • 1
    Book
    Book
    Berlin 〈〈[u.a.]〉〉 : Springer
    UID:
    b3kat_BV024638791
    Format: IX, 167 S. , Ill., graph. Darst.
    ISBN: 3540506381 , 0387506381
    Series Statement: Springer series in electronics and photonics 27
    Language: Undetermined
    Subjects: Engineering
    RVK:
    Keywords: Bipolartransistor ; Silicium ; Bipolartechnik ; Halbleitertechnologie ; Aufsatzsammlung ; Aufsatzsammlung ; Aufsatzsammlung ; Konferenzschrift
    URL: Cover
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    Berlin, Heidelberg : Springer Berlin Heidelberg
    UID:
    b3kat_BV042413522
    Format: 1 Online-Ressource (IX, 167p. 125 illus)
    ISBN: 9783642743603 , 9783642743627
    Series Statement: Springer Series in Electronics and Photonics 27
    Note: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong worldwide competition in fabricating metal-oxide-semiconductor field-effect transistor (MOSFET) memories has accelerated the pace of developments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technological progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to summarize the most recent developments and to discuss the future of bipolar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to­date information is presented. Several conclusions can be drawn from this information: the first and most important is the very large potential for future progress still existing in this field. This progress is characterized by the drive towards higher speed and lower power consumption required for complex single-chip systems, as well as by several concrete technological implementations for fulfilling these demands. The second conclusion is that a large part of this potential can be realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication
    Language: English
    Keywords: Silicium ; Bipolartechnik ; Bipolartransistor ; Halbleitertechnologie ; Aufsatzsammlung
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