Microelectronics Reliability, September 2014, Vol.54(9-10), pp.1901-1905
For the task of improving the reliability and robustness of power electronic semiconductor devices, the main focus is on packaging and joining technology. The improvement is made necessary by various applications which require higher active and passive temperature cycles capability. For example: Automotive applications require a minimum life time of 15 years, wind power 25 and traction applications, 30–40 years and longer. Furthermore, higher reliability is demanded of new semiconductor technology, because maximum junction temperatures will, sooner or later, exceed currently recognized limits. In the near future, silicon devices will reach a maximum junction temperature of up to 200 °C. And the new wideband-gap devices have the potential to exceed even this limit. That is why a new package and joining technology is mandatory. There are new developments in the pipeline: For the die contact, planar wire technology and copper based bond wires can be expected in the long term. This new technology is based on new material science and printed circuit board process techniques. As a robust joining method, sinter or diffusion solder will be in use soon. But on the semiconductor module level, further action can be taken now, or in the near future, to increase reliability significantly. This paper presents improvements, based on material science, which are already available and can be used now, or in the near future.
Power ; Electronic ; Packaging ; Joining ; Material ; Microstructure ; Engineering
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