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  • Applied Physics Letters
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  • 1
    Language: English
    In: Applied Physics Letters, 27 February 2012, Vol.100(9)
    Description: Si/SiGe resonant interband tunnel diodes were fabricated using chemical vapor deposition (CVD) on 200-mm diameter p-doped silicon wafers. The resonant interband tunnel diode structure consists of a p + -i-n + diode that incorporates vapor phase doped δ-doping to enhance quantum mechanical tunneling probability. The tunneling barrier thickness is varied from 2 nm to 8 nm, and a record peak-to-valley current ratio of 5.2 for a CVD process is reported for a 6 nm barrier thickness with a room temperature peak tunneling current of 20 A/cm 2 . The current density increases exponentially with spacer thickness reduction with a maximum value of 280 A/cm 2 for a 2 nm barrier.
    Keywords: Semiconductors
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2012 American Institute of Physics (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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  • 2
    Language: English
    In: Applied Physics Letters, 13 January 2014, Vol.104(2)
    Description: Magnetic field-induced reversal of surface spin polarization for the magnetoelectric antiferromagnet chromia is studied via magnetometry in (0001)-textured thin films of various thicknesses. Reversal solely by magnetic means has been experimentally evidenced in sufficiently thin films. It sets the field-response of chromia films apart from bulk behavior, where switching between time-reversed single domain states requires the simultaneous presence of electric and magnetic fields. In our detailed experiments, we furthermore observe a giant sensitivity of the coercive field on temperature, thus, indicating the potential of magnetoelectric antiferromagnets as promising candidates for energy assisted magnetic recording media.
    Keywords: Magnetics And Spintronics
    ISSN: 0003-6951
    E-ISSN: 1077-3118
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  • 3
    Language: English
    In: Applied Physics Letters, 22 April 2013, Vol.102(16)
    Description: We investigated the nature of the mechanical and the electrical tip-sample contact in scanning conductive torsion mode microscopy (SCTMM). Experiments on the soft conducting polymer blend of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) demonstrated that the tip-sample force and thus the danger of tip-induced sample damage can be minimized. Using current-voltage spectroscopy, we found a space-charge limited conduction behavior with no indication of a tunneling barrier. Spectroscopy and imaging experiments showed that SCTMM allows for a gentler tip-sample contact compared to conventional conductive scanning force microscopy. A gentle and well-defined contact is a prerequisite for reproducible scanning probe based conductivity measurements, in particular on soft organic materials.
    Keywords: Nanoscale Science And Technology
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2013 AIP Publishing LLC (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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  • 4
    Language: English
    In: Applied Physics Letters, 02 April 2012, Vol.100(14)
    Description: We show that magnetometry measurements based upon the magneto-optical Kerr effect and high resolution optical microscopy can be used as a noninvasive probe of magnetization reversal for individual nano-structures. Our measurements demonstrate single pass hysteresis loop measurements for sample sizes down to 30 nm width. A quantitative signal-to-noise ratio evaluation shows that our approach achieves an at least 3-fold improvement in sensitivity if compared to focused laser based nano-magnetometry. An analysis of the physical limits of our detection scheme enables us to estimate that measurements for structures with single digit nm widths and magnetic moments of 10 −16 Am 2 are feasible.
    Keywords: Magnetics And Spintronics
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2012 American Institute of Physics (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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  • 5
    Language: English
    In: Applied Physics Letters, 25 June 2012, Vol.100(26)
    Description: Magnetization reversal correlation is studied as a function of the applied field angle for thin Co-films showing in-plane uniaxial magnetocrystalline anisotropy. We find that the field orientation angle has a profound effect onto the magnetization reversal process leading to a suppression of long-range correlation at sufficiently large field angles in the presence of grain alignment disorder. Correspondingly, this behavior allows for a tuning and the local confinement of magnetization reversal even in strongly exchange-coupled films and therefore presents a most desirable scenario for ultrahigh density magnetic recording.
    Keywords: Magnetics And Spintronics
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2012 American Institute of Physics (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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  • 6
    Language: English
    In: Applied Physics Letters, 28 April 2014, Vol.104(17)
    Description: We perform scanning photocurrent microscopy on WS 2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode, we can invert the sign of the photocurrent showing that the minority photocarriers are either electrons or holes. Both in the electron- and hole-doping regimes the photocurrent decays exponentially as a function of the distance between the illumination spot and the nearest contact, in agreement with a two-terminal Schottky-barrier device model. This allows us to compare the value and the doping dependence of the diffusion length of the minority electrons and holes on a same sample. Interestingly, the diffusion length of the minority carriers is several times larger in the hole accumulation regime than in the electron accumulation regime, pointing out an electron-hole asymmetry in WS 2 .
    Keywords: Photonics And Optoelectronics
    ISSN: 0003-6951
    E-ISSN: 1077-3118
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  • 7
    Language: English
    In: Applied Physics Letters, 10/29/2012, Vol.101(18), p.182405
    Description: We present analytical calculations and kinetic Monte-Carlo modeling of rate-dependent behavior of switching field distributions (SFDs) in an ensemble of Stoner-Wohfarth particles, assuming distributions of anisotropies and volumes, and thermal activation included by the Néel-Brown theory. By applying probabilistic arguments, we show that the SFD can be self-consistently separated into the contribution from distributions of intrinsic properties of particles and the (irreducible) contribution resulting solely from thermal fluctuations, which is shown to become a significant effect at sweep rates relevant to the recording process. This provides a unifying framework for systematic analysis of different classes of systems.
    Keywords: Magnetics And Spintronics;
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: CrossRef
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  • 8
    Language: English
    In: Applied Physics Letters, 12 October 2015, Vol.107(15)
    Description: An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In 0.53 Ga 0.47 As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.
    Keywords: Device Physics
    ISSN: 0003-6951
    E-ISSN: 1077-3118
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  • 9
    Language: English
    In: Applied Physics Letters, 01 December 2014, Vol.105(22)
    Description: The magnetic field dependent reorientation phase transition of epitaxial Co (0001) films with perpendicular magnetic anisotropy is studied as a function of the applied field angle. The experimental data reveal an abrupt qualitative change of the magnetization reversal path at a critical angle between in-plane and out-of-plane field orientation, which is caused by a change in the domain formation process occurring concurrently with the phase transition. By means of our experiments and model calculations, we demonstrate that the observations are due to a transition from instability driven magnetization reversal occurring near in-plane field orientation to domain nucleation processes, which occur near out-of-plane orientation of the magnetic field.
    Keywords: Magnetics And Spintronics
    ISSN: 0003-6951
    E-ISSN: 1077-3118
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  • 10
    Language: English
    In: Applied Physics Letters, 29 August 2011, Vol.99(9)
    Description: We present a methodology for the extraction of the spatial Fourier components of the magnetization profile for an array of nanosized magnetic objects, from diffracted magneto optic Kerr effect measurements. The field dependent magnetization configuration in the unit cell is retrieved by inverse Fourier transform and compared with the predictions of micromagnetic simulations. The comparison demonstrates that the methodology is a powerful optical tool for lens-less diffraction-limited optical imaging of the collective magnetic behavior of nano-structures.
    Keywords: Magnetism And Superconductivity
    ISSN: 0003-6951
    E-ISSN: 1077-3118
    Source: © 2011 American Institute of Physics (AIP)〈img src=http://exlibris-pub.s3.amazonaws.com/AIP_edited.gif style="vertical-align:middle;margin-left:7px"〉
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