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  • 1
    Article
    Article
    High-temperature annealing of electron-irradiated high-voltage diode structures on neutron transmutation-doped Si (2005)
    Details
    Language: English
    In: Vacuum, 2005, Vol.78(2), pp.211-215
    Description: High-voltage diode structures were fabricated in high-resistance neutron transmutation-doped (NTD) silicon and irradiated with 6 MeV electrons. A non-equilibrium minority charge carrier (NMCC) lifetime was measured in the high-resistance region of p –n structures and deep-level transient spectroscopy (DLTS) was used to determine the concentration and energy level positions of radiation-induced defects as a function of annealing temperature in the range 300--800 °C. The results suggest that in structures of the type investigated here, defects are formed with high thermal stability up to 800 °C and with a high formation efficiency when exposed to radiation. These defects’ properties as recombination centers can be used for the fabrication of fast power diodes; their incorporation into device structures should be made at the fabrication stage preceding the formation of ohmic contacts.
    Keywords: Irradiation ; P–N Junction ; Carrier Lifetime ; Annealing ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/j.vacuum.2005.01.028
    URL: View record in ScienceDirect (Access to full text may be restricted)
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  • 2
    Article
    Article
    Effect of electron irradiation on characteristics of Mo Schottky barriers on epitaxial silicon (2009)
    Details
    Language: English
    In: Vacuum, May 1, 2009, Vol.83, p.S134-S136
    Description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.vacuum.2009.01.045 Byline: F.P. Korshunov, I.G. Marchenko, N.E. Zhdanovich, P.M. Gurin Abstract: The results of studies on influence of 6MeV electron irradiation on avalanche breakdown voltage (U.sub.b) and on forward voltage (U.sub.F) at different values of direct current (I.sub.F) for the Mo Schottky diodes on epitaxial silicon of n-type conductivity are presented. It was found out that the avalanche breakdown voltage of the diodes is very sensitive to electron irradiation. A decrease in U.sub.b was observed after electron irradiation with a fluence as low as 1x10.sup.11 cm.sup.-2. An increase in electron irradiation fluence from 1x10.sup.11 cm.sup.-2 to 5x10.sup.14 cm.sup.-2 resulted in 30% decrease in U.sub.b, however, further increase in electron irradiation fluence from 5x10.sup.14 cm.sup.-2 to 3x10.sup.16 cm.sup.-2 led to some increase in the avalanche breakdown voltage. Monotonic increases in U.sub.F values at different I.sub.F with the increase in electron irradiation fluence were observed starting from a fluence of 5x10.sup.14 cm.sup.-2. Radiation-induced changes in U.sub.b were unstable at room temperature and a significant recovery of U.sub.b occurred after maintaining the irradiated diodes at room temperature for 30 days. Annealing at 120[degrees]C for 20min resulted in the almost complete recovery of U.sub.b. Radiation-induced changes in U.sub.F values were stable up to 300[degrees]C. Mechanisms of the observed radiation-induced changes in the U.sub.b and U.sub.F values and defects responsible for the changes are discussed. Author Affiliation: Scientific-Practical Materials Research Centre NAS of Belarus, P. Brovka str. 19, Minsk 220072, Belarus Article History: Received 16 June 2008; Revised 27 January 2009; Accepted 30 January 2009
    Keywords: Avalanches ; Radiation (Physics) ; Epitaxy ; Silicon
    ISSN: 0042-207X
    Source: Cengage Learning, Inc.
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  • 3
    Article
    Article
    Influence of electron irradiation on characteristics of Si 1− x Ge x p–n-structures (2007)
    Details
    Language: English
    In: Vacuum, 2007, Vol.81(10), pp.1171-1174
    Description: Electrically active defects induced by irradiation with 4 MeV electrons and their influence on dynamic and static parameters of p–n-structures with bases on boron doped Si Ge alloys (0〈 ⩽0.06) have been investigated. It has been found that after irradiation with the electron fluence =2×10 cm lifetime of minority charge carriers decreases more than 12 times and forward voltage increases twice. Deep level transient spectroscopy (DLTS) studies have shown that interstitial carbon atoms are dominant electrically active defects induced by the irradiation. These defects are transformed into the complexes “interstitial carbon—interstitial oxygen” upon annealing of irradiated samples in the temperature range 50–100 °C.
    Keywords: Si 1−Xge X Alloys ; P–N-Structures ; Electron Irradiation ; Lifetime of Minority Charge Carriers ; Radiation-Induced Defects ; Dlts Spectra ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/j.vacuum.2007.01.009
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  • 4
    Article
    Article
    Defect-impurity complexes with high thermal stability in epi-Si n.sup.+-p diodes irradiated with MeV electrons.(Report) (2009)
    Details
    Language: English
    In: Vacuum, May 1, 2009, Vol.83, p.S131-S133
    Description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.vacuum.2009.01.044 Byline: F.P. Korshunov (a), S.B. Lastovskii (a), V.P. Markevich (a)(b), L.I. Murin (a), Yu.V. Bogatyrev (a), A.R. Peaker (b) Abstract: Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon n.sup.+-p diodes irradiated with 4MeV electrons at 300K have been studied by means of deep level transient spectroscopy (DLTS). Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps have been determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at E.sub.v +0.39eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (C.sub.i O.sub.2i), which gives rise to the P-line (h[nu]=0.767eV) in photoluminescence spectra. Author Affiliation: (a) Scientific-Practical Materials Research Centre, NAS of Belarus, P. Brovka str. 19, Minsk 220072, Republic of Belarus (b) University of Manchester, School of Electrical and Electronic Engineering, Sackville Str. Building, Manchester M60 1QD, UK Article History: Received 16 June 2008; Revised 22 December 2008; Accepted 30 January 2009
    Keywords: Photoluminescence
    ISSN: 0042-207X
    Source: Cengage Learning, Inc.
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  • 5
    Article
    Article
    Effect of electron irradiation on characteristics of Mo Schottky barriers on epitaxial silicon (2009)
    Details
    Language: English
    In: Vacuum, 2009, Vol.83, pp.S134-S136
    Description: The results of studies on influence of 6 MeV electron irradiation on avalanche breakdown voltage ( ) and on forward voltage ( ) at different values of direct current ( ) for the Mo Schottky diodes on epitaxial silicon of n-type conductivity are presented. It was found out that the avalanche breakdown voltage of the diodes is very sensitive to electron irradiation. A decrease in was observed after electron irradiation with a fluence as low as 1 × 10 cm . An increase in electron irradiation fluence from 1 × 10 cm to 5 × 10 cm resulted in 30% decrease in , however, further increase in electron irradiation fluence from 5 × 10 cm to 3 × 10 cm led to some increase in the avalanche breakdown voltage. Monotonic increases in values at different with the increase in electron irradiation fluence were observed starting from a fluence of 5 × 10 cm . Radiation-induced changes in were unstable at room temperature and a significant recovery of occurred after maintaining the irradiated diodes at room temperature for 30 days. Annealing at 120 °C for 20 min resulted in the almost complete recovery of . Radiation-induced changes in values were stable up to 300 °C. Mechanisms of the observed radiation-induced changes in the and values and defects responsible for the changes are discussed.
    Keywords: Epi-Silicon ; Mo Schottky Diodes ; Electron Irradiation ; Avalanche Breakdown Voltage ; Radiation-Induced Defects ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/j.vacuum.2009.01.045
    URL: View record in ScienceDirect (Access to full text may be restricted)
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  • 6
    Article
    Article
    Structure changes in InP and GaAs crystals double irradiated with electrons and swift heavy ions (2007)
    Details
    Language: English
    In: Vacuum, 2007, Vol.81(10), pp.1175-1179
    Description: We have studied InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions irradiation by means of scanning electron microscopy, atomic force microscopy (AFM) and selective chemical etching. The previous disordering of samples by electron irradiation is shown to be leading to macrodefect formation in the form of cracks and breaks at the depths near the ion end-of-range and on the crystal surface. A possible explanation of the observed effects is proposed.
    Keywords: Inp and Gaas Crystals ; Preliminary Disorder ; Swift Ion Irradiation ; Surface Topography ; Macrodefect Formation ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/j.vacuum.2007.01.010
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  • 7
    Article
    Article
    Defect-impurity complexes with high thermal stability in epi-Si n +-p diodes irradiated with MeV electrons (2009)
    Details
    Language: English
    In: Vacuum, 2009, Vol.83, pp.S131-S133
    Description: Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon - diodes irradiated with 4 MeV electrons at 300 K have been studied by means of deep level transient spectroscopy (DLTS). Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps have been determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at + 0.39 eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (C O ), which gives rise to the P-line ( ν = 0.767 eV) in photoluminescence spectra.
    Keywords: Epi-Silicon ; N +-P-Structures ; Electron Irradiation ; Radiation-Induced Defects ; Deep Levels ; Carrier Lifetime Control ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/j.vacuum.2009.01.044
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  • 8
    Article
    Article
    Study of the recombination properties of thermostable radiation defects in p–n structures manufactured in high resistivity neutron transmutation-doped silicon (2003)
    Details
    Language: English
    In: Vacuum, 10 March 2003, Vol.70(2-3), pp.193-196
    Keywords: Irradiation P–N Junction ; Carrier Lifetime ; Annealing ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/S0042-207X(02)00641-3
    Source: ScienceDirect Journals (Elsevier)
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  • 9
    Article
    Article
    Investigation of radiation-induced defects in the electron irradiated power transistor structures (2003)
    Details
    Language: English
    In: Vacuum, 10 March 2003, Vol.70(2-3), pp.197-200
    Keywords: Power Transistor Structures ; Radiation Defects ; Divacancy ; Dlts Spectra ; Annealing ; Minority Carrier Lifetime ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/S0042-207X(02)00642-5
    Source: ScienceDirect Journals (Elsevier)
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  • 10
    Article
    Article
    Helium and radiation defect accumulation in metals under stress (2008)
    Details
    Language: English
    In: Vacuum, 2008, Vol.82(8), pp.856-866
    Description: The results of investigations of radiation-induced porosity in 18-10 austenitic steel after irradiation by 40-keV He ions and thermo-mechanical treatment are presented. External tensile stress was shown to result in an increase in He bubble size. Helium bubble migration and accumulation on grain boundaries was observed. Bubble clusters on grain boundaries are origins of brittle failure of the material. Helium bubbles increase also during post-radiation annealing. Post-radiation deformation of the material results in a considerable increase in the release rate of implanted helium gas.
    Keywords: Nuclear Reactor Materials ; Helium Embrittlement ; Helium Porosity ; Stress ; Ion Implantation ; Helium Release ; Applied Sciences ; Physics
    ISSN: 0042-207X
    E-ISSN: 1879-2715
    DOI: 10.1016/j.vacuum.2008.01.044
    Source: ScienceDirect Journals (Elsevier)
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