Vacuum, May 1, 2009, Vol.83, p.S131-S133
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.vacuum.2009.01.044 Byline: F.P. Korshunov (a), S.B. Lastovskii (a), V.P. Markevich (a)(b), L.I. Murin (a), Yu.V. Bogatyrev (a), A.R. Peaker (b) Abstract: Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon n.sup.+-p diodes irradiated with 4MeV electrons at 300K have been studied by means of deep level transient spectroscopy (DLTS). Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps have been determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at E.sub.v +0.39eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (C.sub.i O.sub.2i), which gives rise to the P-line (h[nu]=0.767eV) in photoluminescence spectra. Author Affiliation: (a) Scientific-Practical Materials Research Centre, NAS of Belarus, P. Brovka str. 19, Minsk 220072, Republic of Belarus (b) University of Manchester, School of Electrical and Electronic Engineering, Sackville Str. Building, Manchester M60 1QD, UK Article History: Received 16 June 2008; Revised 22 December 2008; Accepted 30 January 2009
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