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  • 1
    Language: English
    In: Japanese Journal of Applied Physics, 2013, Vol.52(8S)
    Description: We have decreased the dislocation density in Al x Ga 1- x N epitaxial layers grown on sapphire wafers by introducing an in-situ deposited SiN nano-mask layer. Taking together results obtained by transmission electron microscopy, photoluminescence, cathodoluminescence, and X-ray diffraction, we were able to derive a schematic model about the AlGaN growth on the SiN nanomask: On the open pores of the nano-mask, Ga-rich AlGaN hillocks develop, whereas on the SiN layer Al-rich AlGaN nucleates owing to the reduced selectivity of Al-containing material. Once the hillocks are formed, Ga-rich material is more efficiently incorporated on the inclined side-facets leading to an Al-rich coverage of the central c -plane part of the hillocks. We observed a bending of the dislocations towards the side-facets of the hillocks, which eventually leads to dislocation bundles with increased probability of dislocation annihilation, separated by fairly defect-free regions. Thus, we could achieve a significant reduction of the edge-type dislocation density in these epitaxial layers.
    Keywords: Aluminum Gallium Nitrides ; Reduction ; Bundles ; Dislocations ; Epitaxial Layers ; Aluminum ; Dislocation Density ; Nanostructure ; Materials Selection ; Defects and Transport (Wc) ; Applied Physics (General) (So) ; Microstructure (EC) ; Constitution/Crystal Structure/Microstructure (AI) ; Physics (General) (Ah);
    ISSN: 00214922
    E-ISSN: 13474065
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  • 2
    Language: English
    In: Japanese Journal of Applied Physics, 2009, Vol.48(6R), p.060201
    Description: We investigate the properties of semipolar InGaN/GaN quantum wells (QWs) emitting in the blue and green spectral region. A single QW is grown on inverse V-shaped GaN pyramids which are formed by selective area epitaxy on a template masked with different hexagonally ordered patterns. Using photo- and locally resolved cathodoluminescence measurements the high material quality of the semipolar planes could be confirmed (full width at half maximum (FWHM) of D 0 X: 2.6 meV). Furthermore, it was found that the InGaN QW emission wavelength within one pyramid depends on the facet type as well as on the position along the facet.
    Keywords: Kathodolumineszenz ; Galliumverbindung ; Drei-Fünf-Verbindung ; Indiumverbindung ; Photolumineszenz ; Quantentopf ; Halbleiter Mit Großer Energielücke ; Galliumnitrid ; Indiumgalliumnitrid ; Engineering ; Physics;
    ISSN: 00214922
    E-ISSN: 13474065
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