In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 11A ( 1992-11-01), p. L1514-
Abstract:
In this study some recent findings on the cleaning action of the NH 4 OH/H 2 O 2 (SC1) step in a pre-gate oxidation cleaning (RCA cleaning) are given. An important parameter in this mixture is the NH 4 OH/H 2 O 2 ratio. The Fe contamination on the silicon surface after this cleaning step is found to increase upon decreasing the NH 4 OH/H 2 O 2 ratio. This can be attributed to the incorporation of Fe in the chemical oxide, grown by the hydrogen peroxide. The particle removal efficiency of the cleaning step is found to decrease upon decreasing the NH 4 OH/H 2 O 2 ratio. On the other hand, using a lower NH 4 OH concentration results in a less severe silicon surface roughening. It is demonstrated in this study that the NH 4 OH/H 2 O 2 ratio during the SC1 step of the cleaning is the determining parameter for the breakdown properties of a gate oxide. A (0.25/1/5) NH 4 OH/H 2 O 2 /H 2 O mixture at 75°C in our experimental conditions is suggested to be the best compromise between particle removal and surface roughness during the SC1 step.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.L1514
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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