In:
Crystals, MDPI AG, Vol. 10, No. 10 ( 2020-10-04), p. 899-
Abstract:
Lattice relaxation on wurtzite GaN microdisks grown by plasma-assisted molecular beam epitaxy was systematically studied. The lattice constants of GaN microdisks were evaluated from high-resolution transmission electron microscopy, and the anisotropic strain was then analyzed by observing the microscopic atomic layers. We found that the vertical lattice strain along the c-axis followed a linear relationship, while the lateral lattice strain along the a-axis exhibited a quadratic deviation. The lattice mismatch is about 0.94% at the interface between the GaN microdisks and the γ-LiAlO2 substrate, which induces the anisotropic strain during epi-growth.
Type of Medium:
Online Resource
ISSN:
2073-4352
DOI:
10.3390/cryst10100899
Language:
English
Publisher:
MDPI AG
Publication Date:
2020
detail.hit.zdb_id:
2661516-2
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