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  • American Vacuum Society  (3)
Type of Medium
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  • American Vacuum Society  (3)
Language
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Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 12, No. 4 ( 1994-07-01), p. 2689-2693
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 12, No. 4 ( 1994-07-01), p. 2689-2693
    Abstract: Terrace width distributions have been calculated from scanning tunneling microscopy (STM) images of molecular-beam epitaxy (MBE)-grown GaAs(001) surfaces misoriented by both 1° and 2° towards the (111)A direction. This analysis reveals a peak in the terrace width distribution at approximately 40–50 Å, regardless of the original miscut, with larger terraces forming in order to preserve the angle of vicinality. Growth of a tilted superlattice (TSL) improves the periodicity of the surface. A statistical analysis of the STM image of a 1° TSL capped with three monolayers of GaAs reveals a bell-shaped distribution of terrace widths with a peak at the average terrace width. These results suggest that MBE growth of vicinal GaAs(001) does not result in equalized steps but that the growth of a TSL does tend towards step equalization. The differences between these two growth regimes are discussed.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1993
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 11, No. 4 ( 1993-07-01), p. 1384-1387
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 11, No. 4 ( 1993-07-01), p. 1384-1387
    Abstract: The growth mechanisms of (Al,Ga)As lateral superlattices (LSL) on GaAs(100) and GaAs (110) vicinal surfaces were studied using transmission electron microscopy (TEM) and Monte Carlo simulations. In GaAs(100) surfaces, spontaneous formation of a LSL from (AlAs)1(GaAs)1 short period superlattices is explained by a vertical exchange reaction model. This mechanism may be the underlying cause of poor lateral segregation in conventional fractional layer (Al,Ga)As LSL. Growth on vicinal GaAs(110) surfaces leads to periodic faceting. Cross-sectional TEM images were compared with simulation of a step-flow model to understand the process of step bunching and the evolution of periodic microfacets.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1993
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 2006
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 24, No. 3 ( 2006-05-01), p. 1156-1161
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 3 ( 2006-05-01), p. 1156-1161
    Abstract: Spherical Si and SnOx nanoparticles in the size range between 3 and 30nm have been synthesized by microwave induced decomposition of silane and gas phase condensation, respectively. They are deposited on thin metal films and investigated by electron microscopy, Auger electron, and electron energy loss spectroscopy. An analysis of the surface composition and stoichiometry reveals that the Si particles are covered with a native oxide of less than 1nm. The energy loss spectra show features corresponding to electronic excitations in the nanoparticles due to valence band plasmons, interband transitions, and core-level ionizations. The plasmon energies are found to increase with decreasing particle diameter d as d−1.17 for Si and d−0.83 for SnOx. These energy shifts are related to the change of the dielectric band gap energy of the semiconductor due to quantum size effects.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2006
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
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