Umfang:
Online-Ressource (VIII, 66 p. 31 illus., 15 illus. in color, online resource)
ISBN:
9783642409059
Serie:
SpringerBriefs in Molecular Science
Inhalt:
In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields
Anmerkung:
Description based upon print version of record
,
IntroductionGrowth mechanism of silicon nanowires -- Stability of silicon nanostructures -- Novel electronic properties of silicon nanostructures -- Summary and remarks.
Weitere Ausg.:
ISBN 9783642409042
Weitere Ausg.:
Druckausg. Zhang, Rui-Qin Growth mechanisms and novel properties of silicon nanostructures from quantum-mechanical calculations Heidelberg [u.a.] : Springer, 2014 ISBN 3642409040
Weitere Ausg.:
ISBN 9783642409042
Sprache:
Englisch
Schlagwort(e):
Silicium
;
Nanostruktur
DOI:
10.1007/978-3-642-40905-9
URL:
Volltext
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