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  • 1
    Language: English
    In: Journal of Non-Crystalline Solids, 03/2005, Vol.351(6-7), pp.477-481
    Description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jnoncrysol.2004.12.013 Byline: R.J. Curry (a), S.W. Birtwell (b), A.K. Mairaj (b), X. Feng (b), D.W. Hewak (b) Abstract: The attenuation of a number of chalcogenide glass optical fibres has been studied with regard to their exposure the environment. We demonstrate that gallium lanthanum sulfide (Ga:La:S) based glasses appear to be as resilient if not more so than arsenic sulfide (As.sub.2S.sub.3) glass to the attack of moisture when stored uncoated in ambient conditions for various periods exceeding 1 year. The increase in the characteristic OH.sup.- attenuation peak was [approximately equal to]3-4dB/m for all fibres following storage. Given the significant improvements achieved in As.sub.2S.sub.3 glass technology over recent years we believe that Ga:La:S based fibres can also be improved to at least match these levels with the advantage of being non-toxic and having a significantly higher melting temperature. Studies of the time-dependant attenuation of the optical fibres during immersion in water have also been carried out. These results show that the deleterious effect of moisture on these glasses occurs over a short time, [approximately equal to]24h, thus having implications on the treatment and storage of fibre preforms prior to optical fibre drawing. Author Affiliation: (a) Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, UK (b) Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK Article History: Received 3 November 2004
    Keywords: Fiber Optic Equipment -- Environmental Aspects ; Rare Earth Metal Compounds -- Environmental Aspects ; Arsenic -- Environmental Aspects ; Sulfides -- Environmental Aspects;
    ISSN: 00223093
    E-ISSN: 18734812
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  • 2
    Language: English
    In: Thin Solid Films, 08/2015, Vol.589, C, pp.369-375
    Description: To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1016/j.tsf.2015.05.036 Byline: Y.G. Fedorenko (a,1), M.A. Hughes (a), J.L. Colaux (a), C. Jeynes (a), R.M. Gwilliam (a), K. Homewood (a), B. Gholipour (b), J. Yao (b), D.W. Hewak (b), T.-H. Lee (c), S.R. Elliott (c), R.J. Curry (a) Keywords Amorphous chalcogenide; Doping; Ion implantation Highlights * Electron conductivity is observed in Bi-implanted GeTe films. * Higher conductivity in Bi-implanted films stems from increased density of electrically active defects. * Bi implanted in amorphous chalcogenides may promote formation of a more chemically ordered alloy. Abstract The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge--Sb--Te, and Ga--La--S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1 x 10.sup.15 cm.sup.- 2 is seen not to change the majority carrier type and activation energy for the conduction process. Higher implantation doses may reverse the majority carrier type in the studied films. Electron conductivity was observed in GeTe films implanted with Bi at a dose of 2 x 10.sup.16 cm.sup.- 2. These studies indicate that native coordination defects present in amorphous chalcogenide semiconductors can be deactivated by means of ion implantation. A substantial density of implantation-induced traps in the studied films and their interfaces with silicon is inferred from analysis of the space-charge-limited current and capacitance-voltage characteristics taken on Au/amorphous chalcogenide/Si structures. Author Affiliation: (a) Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom (b) Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom (c) Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United Kingdom Article History: Received 4 July 2014; Revised 15 March 2015; Accepted 20 May 2015 (footnote)1 Present address: Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF, United Kingdom.
    Keywords: Semiconductors (Materials) – Analysis ; Semiconductors (Materials) – Electric Properties ; Activation Energy – Analysis ; Activation Energy – Electric Properties ; Silicon – Analysis ; Silicon – Electric Properties;
    ISSN: 00406090
    E-ISSN: 18792731
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  • 3
    Language: English
    In: Electronics Letters, 2007, Vol.43(15), p.830
    Description: Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200 Omega m in the amorphous state and 40 Omega m in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150 ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.
    Keywords: Amorpher Zustand ; Kupfer ; Kristallisation ; Elektrische Leitfähigkeit ; Gallium ; Hochgeschwindigkeitsoptotechnik ; Lanthan ; Sputterabscheidung ; Schwefel ; Dünnschicht ; Amorphe Dünne Schicht ; Feststoff-Feststoff-Grenzschicht ; Engineering;
    ISSN: 00135194
    E-ISSN: 1350911X
    Source: Institution of Engineering and Technology (IET) (via CrossRef)
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