Nano letters, 10 January 2018, Vol.18(1), pp.101-108
We report on a growth study of self-catalyzed GaAs nanowires based on time-resolved in situ X-ray structure characterization during molecular-beam-epitaxy in combination with ex situ scanning-electron-microscopy. We reveal the evolution of nanowire radius and polytypism and distinguish radial growth processes responsible for tapering and side-wall growth. We interpret our results using a model for diameter self-stabilization processes during growth of self-catalyzed GaAs nanowires including the shape of the liquid Ga-droplet and its evolution during growth.
Nanowires ; Growth ; in Situ X-Ray Diffraction ; Molecular Beam Epitaxy ; Polytypism ; Self-Catalyzed ; Tapering
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