In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 10R ( 1995-10-01), p. 5789-
Abstract:
A new two-dimensional numerical simulation which can accurately reproduce the empirical electrical characteristics of vertical field-emission triodes (FET's) with various gate geometries has been developed. The electrical characteristics of volcano-shaped-gate FET's were simulated for the first time and compared with those of planar-gate ones. Volcano-shaped-gate FET's exhibit significant advantages over planar-gate ones due to their superior current-voltage ( I-V ) properties and larger tolerance of fabrication error. A reasonable definition of emission area was obtained by applying the non-uniform current density model. For sub-micron gate aperture, the gate current is obvious only if the device structure is deeply tip-recessed. On the basis of the evaluation of the device structures including the tip cone angle, the related tip-to-gate height, the emitter shape, and the shrinkage of gate aperture, a high-aspect-ratio conical emitter with a small tip radius will be the optimum structure of FET's for low-voltage operation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.5789
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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