In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 10B ( 1997-10-01), p. L1364-
Abstract:
The impurity-induced layer disordering in B- or Si-implanted Ga 0.8 In 0.2 As/Ga x In 1- x As y P 1- y /Ga 0.51 In 0.49 P /GaAs quantum well structure has been studied. The wavelength shift of the photoluminescence peak and the degree of intermixing can be determined by the type and energy of implanted ions with followed annealing at the temperature of 900° C. A photoluminescence peak shift of 70 meV was obtained by 120 keV Si-implantation and annealing at 900° C. The diffused interface was also studied by cross sectional transmission electron microscopy.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L1364
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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