In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6A ( 1997-06-01), p. L643-
Abstract:
Porous silicon (PS) light emitting diodes (LEDs) consisting of n-PS/p-PS/p-Si or n-PS/p-Si structures fabricated by postanodical Sb diffusion were characterized for assessment of the effect of Sb diffusion upon PS-LED characteristics. The homogeneity of electrical characteristics of PS-LEDs was improved by Sb diffusion. Consequently, the average series resistance of the Sb-diffused PS-LEDs was found to be lower than that of nondiffused PS-LEDs. The average external quantum efficiency of the PS-LEDs was also enhanced by Sb diffusion. The experimental results were discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L643
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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