Format:
Online-Ressource
ISSN:
1521-3951
Content:
Abstract: An electron paramagnetic resonance (EPR) study of hydrogen‐related radiation‐induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated Czochralski‐grown Si (Cz‐Si) crystals after irradiation with fast electrons and subsequent annealing in the temperature range of 300 to 550 °C. An EPR signal with isotropic g‐factor of 1.9987, labeled TU1, has been found in hydrogenated Cz‐Si crystals which were irradiated and annealed at 300 to 350 °C. It was shown that the TU1 signal is related to the shallow donor state of the D1 center. Annealing at temperatures higher than 350 °C resulted in transformation of the D1 to the D2 centers. This led to the transformation of the TU1 spectrum to another one with S = 1/2 and anisotropic g‐tensor, the principal values of which were found to be very close to those for the Si‐NL10 EPR spectra in silicon. The observed EPR spectra are compared with the Si‐NL10 ones and possible atomic structures, and formation mechanisms of the defects which give rise to these spectra are discussed.
In:
volume:210
In:
number:2
In:
year:1999
In:
pages:545-549
In:
extent:5
In:
Physica status solidi / B. B, Basic solid state physics, Weinheim : Wiley-VCH, [1971]-, 210, Heft 2 (1999), 545-549 (gesamt 5), 1521-3951
Language:
English
DOI:
10.1002/(SICI)1521-3951(199812)210:2〈545::AID-PSSB545〉3.0.CO;2-L
URN:
urn:nbn:de:101:1-2023121910132660239606
URL:
https://doi.org/10.1002/(SICI)1521-3951(199812)210:2〈545::AID-PSSB545〉3.0.CO;2-L
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023121910132660239606
URL:
https://d-nb.info/1314020021/34
URL:
https://doi.org/10.1002/(SICI)1521-3951(199812)210:2〈545::AID-PSSB545〉3.0.CO;2-L
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