In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 1A ( 1992-01-01), p. L7-
Kurzfassung:
Calculations of the confinement subbands energy levels, interband transitions energy and related overlapping wavefunctions in a single In 0.2 Ga 0.8 As/GaAs non-square strained quantum well structure have been carried out for an error function confinement profile. The results indicate a squeezing of subband states during the latter stages of diffusion, and an enhancement of the off diagonal transitions overlapping wavefunction, during the mid stages of diffusion, which give rise to a relaxed selection rule.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1992
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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