Format:
Online-Ressource
ISSN:
1862-6319
Content:
Abstract: Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect‐related D1 and D2 lines and is supposed to be formed by extended defects within the NWs that are decorated with oxygen. Moreover, luminescence bands are found that are related to Si oxide and/or the interface between Si and Si oxide. In addition, the Si band‐to‐band line and the G center are observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
In:
volume:203
In:
number:8
In:
year:2006
In:
pages:R55-R57
In:
extent:3
In:
Physica status solidi / A. A, Applied research, Weinheim : Wiley-VCH, 1970-, 203, Heft 8 (2006), R55-R57 (gesamt 3), 1862-6319
Language:
English
DOI:
10.1002/pssa.200622143
URN:
urn:nbn:de:101:1-2023083005574076117990
URL:
https://doi.org/10.1002/pssa.200622143
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023083005574076117990
URL:
https://d-nb.info/1300450231/34
URL:
https://doi.org/10.1002/pssa.200622143
Bookmarklink