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Journal of physics; D: Applied physics (from 1970)

Institute of Physics ; Institute of Metals ; Institution of Metallurgists ; [et al.]

Bristol : IOP Publ. | London : IOP ; 2.Ser. 3.1970-volume 54, number 50 (16 December 2021)

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UID:

gbv_129505919

ISSN: 0022-3727

Note: Ab 2022 bietet IOP die Druck-Ausgabe im EU-Bereich nicht mehr an , Darin: Letters to the editor , Beteil. Körp. anfangs: Institute of Metals; Institution of Metallurgists , Einzelne Hefte als Special issue bez. , Index 1/3.1968/70

Additional Edition: ISSN 1361-6463

Additional Edition: Erscheint auch als Online-Ausgabe Journal of physics. D, Applied physics Bristol : IOP Publ., 1968 ISSN 1361-6463

Former: Vorg. British journal of applied physics

Language: English

Keywords: Angewandte Physik ; Zeitschrift ; Zeitschrift

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Stabi Berlin

Article

Al xGa1- xN/GaN heterostructures on a thin silicon-on-insulator substrate for metalsemiconductormetal photodetectors (2011)

Lin, Vivian Kaixin ; Dolmanan, Surani-bin ; Teo, Siew Lang ; [et al.]

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UID:

gbv_67164906X

Format: 7

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 44.2011, 36, Art. 365102, insgesamt 7 S., 0022-3727

In: volume:44

In: year:2011

In: number:36

In: extent:7

Language: English

DOI: 10.1088/0022-3727/44/36/365102

URL: http://dx.doi.org/10.1088/0022-3727/44/36/365102

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AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures (2011)

Witte, Hartmut ; Warnke, Christian ; Voigt, Thomas ; [et al.]

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UID:

gbv_666402221

Format: 6

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, Bd. 44.2011, 35, Art. 355501, insges. 6 S., 0022-3727

In: volume:44

In: year:2011

In: number:35

In: extent:6

Language: English

DOI: 10.1088/0022-3727/44/35/355501

Author information: Sundmacher, Kai 1965-

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Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting (2021)

Mejia Chueca, Maria del Carmen [VerfasserIn] ; Sánchez, Luis Francisco [VerfasserIn] ; Kurniawan, Mario [VerfasserIn] ; [et al.]

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UID:

gbv_1752011449

ISSN: 0022-3727

Content: The photoelectrochemical (PEC) properties of sputtered aluminum doped hydrogenated amorphous silicon carbide thin films grown on p-type crystalline silicon substrates were investigated in 1 M solution under chopped light illumination. Optical and structural properties of the top absorber layer were systematically assessed after post-deposition isochronical annealing treatments. Samples exhibited a noticeable improvement of the opto-electronic properties after thermal treatments. In addition, an abrupt enhancement of the photocurrent was observed reaching a saturation value of 17 mA cm^-2 at -1.75 V vs. Ag/AgCl (3.5 M KCl). In this research we propose that this enhancement effect is associated to a charge transfer kinetic mechanism influenced by surface states and the p-type substrate. The latter most likely due to the space charge region extending beyond the absorber layer reaching the substrate. Current density-potential and electrochemical impedance spectroscopy measurements in dark revealed a reduction of the native layer at cathodic potentials higher than -1 V vs. Ag/AgCl (3.5 M KCl), which contributes to the high charge transfer kinetic of the system. We believe that these results will contribute to understand the substrate influence in the PEC performance of top absorber layers in multilayer structures for solar water splitting.

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 54(2021), 19, Artikel-ID 195101, Seite 1-12, 0022-3727

In: volume:54

In: year:2021

In: number:19

In: elocationid:195101

In: pages:1-12

Language: English

DOI: 10.1088/1361-6463/abdb69

Author information: Grieseler, Rolf 1983-

Author information: Bund, Andreas 1969-

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Characterization of iron oxide films prepared by laser irradiation in oxygen atmosphere (2009)

Gupta, Ratnesh [VerfasserIn] ; Khandelwal, A. [VerfasserIn] ; Gupta, Ajay [VerfasserIn] ; [et al.]

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UID:

gbv_608917370

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 42(2009), 18, Artikel-ID 185305, Seite 1-4, 0022-3727

In: volume:42

In: year:2009

In: number:18

In: elocationid:185305

In: pages:1-4

Language: English

DOI: 10.1088/0022-3727/42/18/185305

Author information: Schaaf, Peter 1963-

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Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN (2010)

Sakalauskas, Egidijus [VerfasserIn] 1982- ; Behmenburg, Hannes [VerfasserIn] ; Hums, C. [VerfasserIn] ; [et al.]

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UID:

gbv_634625225

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 43(2010), 36, Artikel-ID 365102, Seite 1-10, 0022-3727

In: volume:43

In: year:2010

In: number:36

In: elocationid:365102

In: pages:1-10

Language: English

DOI: 10.1088/0022-3727/43/36/365102

Author information: Schley, Pascal 1978-

Author information: Behmenburg, Hannes

Author information: Sakalauskas, Egidijus 1982-

Author information: Dadgar, Armin

Author information: Goldhahn, Rüdiger 1960-

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Energy losses in mechanically modified bacterial magnetosomes (2016)

Molcan, Matus [VerfasserIn] ; Gojzewski, Hubert [VerfasserIn] ; Skumiel, Andrzej [VerfasserIn] ; [et al.]

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UID:

gbv_86603675X

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 49(2016), 36, Artikel-ID 365002, Seite 1-11, 0022-3727

In: volume:49

In: year:2016

In: number:36

In: elocationid:365002

In: pages:1-11

Language: English

Author information: Dutz, Silvio 1972-

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Erratum: Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting (2021J. Phys. D: Appl. Phys. 54 195101) (2021)

Mejia Chueca, Maria del Carmen [VerfasserIn] ; Sánchez, Luis Francisco [VerfasserIn] ; Kurniawan, Mario [VerfasserIn] ; [et al.]

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UID:

gbv_1755993064

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 54(2021), 26, Artikel-ID 269601, Seite 1-3, 0022-3727

In: volume:54

In: year:2021

In: number:26

In: elocationid:269601

In: pages:1-3

Language: English

DOI: 10.1088/1361-6463/abefee

Author information: Grieseler, Rolf 1983-

Author information: Bund, Andreas 1969-

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GaN polarity domains spatially resolved by x-ray standing wave microscopy (2003)

Drakopoulos, M. [VerfasserIn] ; Zegenhagen, J. [VerfasserIn] ; Lee, T.-L. [VerfasserIn] ; [et al.]

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UID:

gbv_585748470

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 36(2003), 10A, Seite A214-A216, 0022-3727

In: volume:36

In: year:2003

In: number:10A

In: pages:A214-A216

Language: English

DOI: 10.1088/0022-3727/36/10A/344

Author information: Ambacher, Oliver 1963-

Author information: Cimalla, Volker 1967-

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Grazing incidence x-ray diffraction at free-standing nanoscale islands: fine structure of diffuse scattering (2003)

Grigoriev, Daniil ; Hanke, Michael ; Schmidbauer, Martin ; [et al.]

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UID:

gbv_507882571

ISSN: 0022-3727

In: Journal of physics. D, Applied physics, Bristol : IOP Publ., 1970, 36(2003), 10A, Seite A225-A230, 0022-3727

In: volume:36

In: year:2003

In: number:10A

In: pages:A225-A230

Language: English

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Kooperativer Bibliotheksverbund

Berlin Brandenburg