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Uniform Quantum Wire and Quantum Dot Arrays by Natural Self-Faceting on Patterned Substrates

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Abstract

The combination of self-organized growth on high-index substrates with lithographic patterning and atomic hydrogen assistance allows the fabrication of GaAs quantum wires and quantum dots as well as coupled wire-dot arrays with superior structural and electronic properties by molecular beam epitaxy. The selectivity of patterned growth on high-index substrates differs qualitatively from that on low-index ones thus producing quantum wire and quantum dot structures which fulfill the stringent criteria on the geometrical features to be met for useful devices.

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Authors and Affiliations

  1. Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117, Berlin, Germany

    Richard Nötzel, Jörg Fricke, Uwe Jahn, Klaus-Jürgen Friedland, Manfred Ramsteiner, Hans-Peter Schönherr, Achim Trampert & Klaus H. Ploog

  2. Department of Materials Science, Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, California, 90089-0241, USA

    Zhichuan Niu

Authors
  1. Richard Nötzel
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  2. Jörg Fricke
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  3. Zhichuan Niu
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  4. Uwe Jahn
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  5. Klaus-Jürgen Friedland
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  6. Manfred Ramsteiner
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  7. Hans-Peter Schönherr
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  8. Achim Trampert
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  9. Klaus H. Ploog
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Correspondence to Richard Nötzel.

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Nötzel, R., Fricke, J., Niu, Z. et al. Uniform Quantum Wire and Quantum Dot Arrays by Natural Self-Faceting on Patterned Substrates. MRS Online Proceedings Library 570, 105–116 (1999). https://doi.org/10.1557/PROC-570-105

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  • DOI: https://doi.org/10.1557/PROC-570-105

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