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Gas flow effects on the structure and composition of SiNx/Si/SiNx films prepared by radio-frequency magnetron sputtering

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Abstract

The structure and composition of SiNx/Si/SiNx films were investigated by means of x-ray reflectivity, x-ray photoelectron spectroscopy, and atomic force microscopy. The three-layer films were prepared by radio-frequency magnetron sputtering under the condition of constant nitrogen flow and the argon flow. It was found that the deposition rate and surface structure of the silicon nitride films were mainly determined by the nitrogen flow rather than the argon flow. But the composition of the silicon nitride films was controlled by the gas flow ratio (FAr/FN2) used during sputtering.

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References

  1. C.J. Mogab and E. Lugujjo, J. Appl. Phys. 47, 1302 (1976).

    Article  CAS  Google Scholar 

  2. C.J. Mojab, P.M. Petroff, and T.T. Sheng, J. Electrochem. Soc. 122, 815 (1975).

    Article  Google Scholar 

  3. J.H. Kim and K.W. Chung, J. Appl. Phys. 83, 5831 (1998).

    Article  CAS  Google Scholar 

  4. B. Li, T. Fujimoto, N. Fukumoto, K. Honda, and I. Kojima . Thin Solid Films 334, 140 (1998).

    Article  CAS  Google Scholar 

  5. S. Berg, T. Larsson, and H-O. Blom, J. Vac. Sci. Technol. A 4, 594 (1986).

    Article  CAS  Google Scholar 

  6. S. Berg, H-O. Blom, T. Larsson, and C. Nender, J. Vac. Sci. Technol. A 5, 202 (1986).

    Article  Google Scholar 

  7. S. Berg, H-O. Blom, M. Moradi, C. Nender and T. Larsson, J. Vac. Sci. Technol. A 7, 1225 (1989).

    Article  CAS  Google Scholar 

  8. F.C. Stedile, I.J.R. Baumvol, W.H. Schreiner, and F.L. Freire Jr ., J. Vac. Sci. Technol. A 10, 462 (1992).

    Article  CAS  Google Scholar 

  9. I. Kojima, S. Wei, B. Li, and T. Fujimoto, J. Surf. Analysis 4, 70 (1998).

    Google Scholar 

  10. S. Wei, B. Li, T. Fujimoto, and I. Kojima, Phys. Rev. B 58, 3605 (1998).

    Article  CAS  Google Scholar 

  11. B. Li, T. Fujimoto, N. Fukumoto, and I. Kojima, J. Vac. Sci. Technol. A17, 552 (1999).

    Article  Google Scholar 

  12. I. Kojima and M. Kurahashi, J. Elect. Sped. Relat. Phenom. 42, 177 (1987).

    Article  CAS  Google Scholar 

  13. G.S. Bales, R. Bruinsma, E.A. Eklund, R.P.U. Karunasiri, J. Rudnick, and A. Zangwill, Science 249, 264 (1990).

    Article  CAS  Google Scholar 

  14. C.J. Mogab, P.M. Petroff, and T.T. Sheng, J. Electrochem. Soc. 122, 815 (1975).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Analytical Chemistry, National Institute of Materials and Chemical Research, 305, Tsukuba, Ibaraki, Japan

    Wentao Xu, Boquan Li, Toshiyuki Fujimoto & Isao Kojima

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  1. Wentao Xu
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  2. Boquan Li
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  3. Toshiyuki Fujimoto
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  4. Isao Kojima
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Correspondence to Isao Kojima.

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Xu, W., Li, B., Fujimoto, T. et al. Gas flow effects on the structure and composition of SiNx/Si/SiNx films prepared by radio-frequency magnetron sputtering. Journal of Materials Research 16, 308–313 (2001). https://doi.org/10.1557/JMR.2001.0047

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  • DOI: https://doi.org/10.1557/JMR.2001.0047

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