1655996355     

422100331                        

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Radiation effects and soft errors in integrated circuits and electronic devices / editors, R.D. Schrimpf, D.M. Fleetwood

Schrimpf, Ronald Donald ; Fleetwood, Daniel M.

Singapore ; New Jersey : World Scientific Pub, c2004

Online Ressource (viii, 339 p.) : ill.

Englisch

Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623. - Includes bibliographical references. - Description based on print version record

Erscheint auch als: Radiation effects and soft errors in integrated circuits and electronic devices. - Singapore ; New Jersey : World Scientific Pub, ©2004 (Druck-Ausgabe)

978-981-279-470-3 (electronic bk.); 981-279-470-0 (electronic bk.)

978-981-238-940-4 (ISBN der Printausgabe); 981-238-940-7 (ISBN der Printausgabe)

OCoLC: 646769029 (aus SWB)     

Online-Ausg.

Elektronische Ressource: Zugang über Aggregator-Datenbank (Lizenzangabe: Lizenzpflichtig)

TK7870.285

621.3815     Ähnliche Literatur

bisacsh: TEC008020 ; bisacsh: TEC008010 ; bisacsh: TEC 008020 ; bisacsh: TEC 008010

LOC-SH: Electronic circuits -- Effect of radiation on ; Integrated circuits -- Effect of radiation on ; Electronic circuits -- Effect of radiation on ; Integrated circuits -- Effect of radiation on

Electronic books ; TECHNOLOGY & ENGINEERING ; Electronics ; Circuits ; Integrated ; TECHNOLOGY & ENGINEERING ; Electronics ; Circuits ; General ; Integrated circuits ; Effect of radiation on

2. Power MOSFET Technotogies3. Total Dose Ionizing Radiation Effects on Power MOSFETs; 4. Single Event Radiation Effects; 5. Conclusions; Introduction to SOI MOSFETs: Context Radiation Effects and Future Trends; 1. Introduction; 2. Current Status of SOI Technology; 3. Operation Mechanisms in SOI MOSFETs; 4. Radiation Effects on SOI MOSFETs; 5. Future Trends; 6. Conclusions; Total-Dose and Single-Event Effects in Silicon-Germanium Heterojunction Bipolar Transistors; 1. Introduction; 2. The SiGe HBT; 3. Radiation Response of SiGe HBTs; 4. SiGe HBT Circuit Tolerance.

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3. Summary and ConclusionsInvestigation of Single-Event Transients in Fast Integrated Circuits with a Pulsed Laser; 1. Basic Mechanisms of a SET; 2. SET Laser Testing; 3. Experimental set-up for SET laser testing; 4. Results; 5. Conclusions; System Level Single Event Upset Mitigation Strategies; 1. Introduction; 2. Systems Engineering for Energetic Particle Environment Compatibility; 3. Fault Tolerant Systems Strategies; Radiation-Tolerant Design for High Performance Mixed-Signal Circuits; 1. Introduction; 2. Radiation Mechanisms in Mixed-Signal Integrated Circuits.