I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band

Ingo Tischer, Martin Feneberg, Martin Schirra, Hady Yacoub, Rolf Sauer, Klaus Thonke, Thomas Wunderer, Ferdinand Scholz, Levin Dieterle, Erich Müller, and Dagmar Gerthsen
Phys. Rev. B 83, 035314 – Published 19 January 2011

Abstract

We investigate the 3.32eV defect-related emission band in GaN correlating transmission electron microscopy and spatially and spectrally resolved cathodoluminescence at low temperature. The band is unambiguously associated with basal plane stacking faults of type I2, which are a common defect type in semi- and nonpolar GaN grown on foreign substrates. We ascribe the luminescence to free-to-bound transitions. The suggested intrinsic acceptors involved have an ionization energy of 0.17eV, and are located at the I2-type basal plane stacking faults.

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  • Received 7 May 2010

DOI:https://doi.org/10.1103/PhysRevB.83.035314

© 2011 American Physical Society

Authors & Affiliations

Ingo Tischer*, Martin Feneberg, Martin Schirra, Hady Yacoub, Rolf Sauer, and Klaus Thonke

  • Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, D-89069 Ulm, Germany

Thomas Wunderer and Ferdinand Scholz

  • Institut für Optoelektronik, Universität Ulm, D-89069 Ulm, Germany

Levin Dieterle, Erich Müller, and Dagmar Gerthsen

  • Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D-76128 Karlsruhe, Germany

  • *ingo.tischer@uni-ulm.de

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Vol. 83, Iss. 3 — 1 January 2011

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