Abstract
We investigate the defect-related emission band in GaN correlating transmission electron microscopy and spatially and spectrally resolved cathodoluminescence at low temperature. The band is unambiguously associated with basal plane stacking faults of type , which are a common defect type in semi- and nonpolar GaN grown on foreign substrates. We ascribe the luminescence to free-to-bound transitions. The suggested intrinsic acceptors involved have an ionization energy of , and are located at the -type basal plane stacking faults.
- Received 7 May 2010
DOI:https://doi.org/10.1103/PhysRevB.83.035314
© 2011 American Physical Society